JANKCBP2N3700-Transistor-Die High-Power Transistor in Die Package by JANKCBP2N

  • This transistor die controls current flow efficiently, enabling precise switching and amplification in circuits.
  • The device offers stable electrical characteristics essential for consistent performance under varying conditions.
  • Its compact die form allows for space-saving integration in densely packed electronic assemblies.
  • Ideal for use in power management modules, where reliable transistor operation ensures steady energy regulation.
  • Manufactured with quality processes that enhance durability and long-term operational stability.
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产品上方询盘

JANKCBP2N3700-Transistor-Die Overview

The JANKCBP2N3700-Transistor-Die is a high-performance NPN bipolar junction transistor die designed for industrial and electronic circuit integration. Offering robust current handling and voltage capabilities, it is ideal for amplification and switching applications requiring reliable operation under varied electrical stresses. Manufactured with precision semiconductor processes, this transistor die ensures consistent electrical characteristics and thermal stability, making it suitable for custom packaging and high-density circuit design. For engineers seeking a versatile transistor die with proven reliability, the JANKCBP2N3700 represents a dependable choice. Learn more at IC Manufacturer.

JANKCBP2N3700-Transistor-Die Key Features

  • High voltage tolerance: Supports collector-emitter voltages up to 60 V, enabling use in medium-power switching applications.
  • Robust current capacity: Capable of handling collector currents up to 200 mA, suitable for moderate load driving requirements.
  • Low saturation voltage: Minimizes power loss during switching, improving overall circuit efficiency.
  • Compact die design: Facilitates integration into custom packages or hybrid modules, supporting advanced electronic assembly.

JANKCBP2N3700-Transistor-Die Technical Specifications

ParameterSpecification
Transistor TypeNPN Bipolar Junction Transistor Die
Collector-Emitter Voltage (Vce)60 V (max)
Collector Current (Ic)200 mA (max)
Power Dissipation500 mW (typical)
Transition Frequency (fT)100 MHz (typical)
Gain Bandwidth Product100 MHz (typical)
Base-Emitter Voltage (Vbe)0.7 V (typical)
Package TypeTransistor Die (bare silicon)

JANKCBP2N3700-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers superior integration flexibility compared to packaged transistors, enabling designers to optimize board space and thermal management. With its reliable voltage and current ratings, it provides a strong balance of performance and durability, reducing sensitivity to electrical stress. Its low saturation voltage contributes to improved power efficiency, making it a competitive choice for industrial amplification and switching tasks where reliability and precision are critical.

Typical Applications

  • Power amplification in analog circuits requiring medium voltage and current capabilities, such as audio amplifiers and signal boosters.
  • Switching elements in industrial control systems for driving loads and relays.
  • Custom semiconductor packaging where bare die integration allows miniaturization and enhanced thermal paths.
  • Driver stages in communication equipment and general-purpose transistor functions in electronic modules.

JANKCBP2N3700-Transistor-Die Brand Info

The JANKCBP2N3700-Transistor-Die is brought to market by IC Manufacturer, a leading semiconductor supplier known for precision-engineered transistor components. This product exemplifies the company’s commitment to delivering high-quality, reliable transistor dies that support advanced electronic designs. The die form factor ensures versatility for OEMs and electronic assembly specialists, enabling seamless integration into a wide range of industrial and commercial applications.

FAQ

What is the maximum voltage rating for the JANKCBP2N3700 transistor die?

The maximum collector-emitter voltage rating for this transistor die is 60 volts. This ensures the device can operate safely within medium voltage applications without risk of breakdown under normal operating conditions.

Can the JANKCBP2N3700 handle high current loads?

Yes, this transistor die can handle collector currents up to 200 milliamps. This capacity makes it suitable for moderate power switching and amplification tasks in industrial circuits.

Is the transistor die suitable for integration into custom packaging?

Absolutely. Being a bare die, it is designed specifically for integration into custom semiconductor packages or hybrid circuits, allowing engineers to optimize size and thermal management for their designs.

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产品中间询盘

What advantages does the die form factor offer compared to standard transistor packages?

The die form factor provides enhanced flexibility in circuit layout and thermal dissipation. It enables designers to reduce package size and tailor the transistor??s placement directly on substrates or multi-chip modules for improved performance.

What typical applications benefit most from using this transistor die?

This transistor die is ideal for power amplification, switching in industrial control systems, driver stages in communication devices, and any application requiring reliable transistor performance with custom packaging options.

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