JANKCBP2N3439-Transistor-Die High-Speed Switching Transistor | Die Package

  • This transistor die controls current flow efficiently, enabling precise signal amplification in electronic circuits.
  • The compact package reduces board space, making it suitable for densely populated circuit designs.
  • Its low power consumption supports energy-efficient operation in battery-powered devices.
  • Ideal for use in switching applications, it enhances device responsiveness and overall system performance.
  • Manufactured with stringent quality controls to ensure consistent performance and long-term reliability.
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产品上方询盘

JANKCBP2N3439-Transistor-Die Overview

The JANKCBP2N3439-Transistor-Die is a high-performance semiconductor component designed for precision switching and amplification in industrial electronic circuits. Manufactured with advanced die fabrication techniques, this transistor die offers robust electrical characteristics optimized for integration into power management and signal processing modules. Its compact design and reliable operation support engineers and sourcing specialists in achieving efficient device assembly and enhanced system performance. For detailed procurement and technical support, IC Manufacturer provides comprehensive datasheets and customer service.

JANKCBP2N3439-Transistor-Die Key Features

  • High Current Handling Capability: Supports significant collector current, enabling effective power regulation in demanding industrial environments.
  • Low Saturation Voltage: Minimizes power loss and heat generation, improving energy efficiency and thermal management in applications.
  • Robust Die Construction: Ensures mechanical stability and reliability under varying operating conditions, enhancing long-term device durability.
  • Optimized Gain Characteristics: Facilitates precise amplification, critical for signal integrity in analog and switching circuits.

JANKCBP2N3439-Transistor-Die Technical Specifications

ParameterSpecification
Collector-Emitter Voltage (VCEO)160 V
Collector Current (IC) Maximum10 A
Power Dissipation (PD)80 W
Gain Bandwidth Product (fT)30 MHz
DC Current Gain (hFE)40?C160
Transition FrequencyUp to 30 MHz
Junction Temperature (TJ)150 ??C
Package TypeDie form (bare semiconductor die)

JANKCBP2N3439-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers superior current capacity and low saturation voltage compared to typical discrete transistor dies, reducing thermal losses and improving efficiency. Its robust die construction ensures reliability even under harsh industrial conditions. The device??s optimized gain characteristics provide stable and accurate amplification, making it a preferred choice for applications demanding precision and durability in power and signal control.

Typical Applications

  • Power Amplification in Industrial Controls: Suitable for use in power amplifier circuits where high current and voltage handling are critical for system stability and performance.
  • Switching Regulators: Efficiently manages switching operations in DC-DC converters and voltage regulation modules.
  • Signal Processing Circuits: Provides reliable amplification for analog signal conditioning in instrumentation.
  • Motor Driver Circuits: Supports transistor-driven motor control applications requiring robust switching and current capacity.

JANKCBP2N3439-Transistor-Die Brand Info

The JANKCBP2N3439-Transistor-Die is a product from a trusted semiconductor manufacturer specializing in high-quality transistor dies for industrial electronics. This product line is recognized for consistent performance, rigorous quality control, and design that meets demanding engineering requirements. Its availability as a bare die makes it ideal for custom assembly and integration into complex electronic modules, emphasizing versatility and reliability for sourcing specialists and engineers.

FAQ

What is the maximum collector current rating of this transistor die?

The maximum collector current rating is 10 A, allowing the die to handle substantial current flow suitable for power-intensive industrial applications.

How does the low saturation voltage benefit system design?

Low saturation voltage reduces power dissipation and heat generation, which improves energy efficiency and simplifies thermal management in the final application.

Is this transistor die suitable for high-frequency applications?

Yes, with a gain bandwidth product up to 30 MHz and transition frequency at the same range, it supports moderate high-frequency switching and amplification tasks.

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产品中间询盘

Can this transistor die operate reliably under high junction temperatures?

It is rated for junction temperatures up to 150 ??C, ensuring reliable operation in environments with elevated thermal stress common in industrial systems.

What packaging format does this transistor come in?

This product is supplied as a bare semiconductor die, allowing for custom packaging and integration tailored to specific application needs.

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