JANKCBM2N5004-Transistor-Die Overview
The JANKCBM2N5004-Transistor-Die is a high-performance semiconductor component designed for efficient switching and amplification in industrial and electronic applications. This transistor die offers reliable electrical characteristics with proven stability under varying operational conditions. Engineered to meet demanding power and frequency requirements, it ensures enhanced device integration and durability. Ideal for engineers and sourcing specialists seeking a compact, robust transistor solution, it supports optimized circuit performance. For detailed manufacturing insights, visit IC Manufacturer.
JANKCBM2N5004-Transistor-Die Key Features
- High current capability: Enables handling of significant load currents, ensuring robust operation in power-sensitive applications.
- Low on-resistance: Minimizes conduction losses, improving overall device efficiency and thermal performance.
- Fast switching speed: Supports high-frequency operation, making it suitable for modern pulse-width modulation and signal processing tasks.
- Compact transistor die size: Facilitates easy integration into complex semiconductor packages and modules.
JANKCBM2N5004-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Maximum Collector-Emitter Voltage (VCEO) | 500 V |
| Maximum Collector Current (IC) | 2 A |
| Power Dissipation (PD) | 30 W |
| Gain Bandwidth Product (fT) | 100 MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.5 V |
| Storage Temperature Range (Tstg) | -55??C to 150??C |
| Operating Junction Temperature (Tj) | 150??C |
| Base-Emitter Voltage (VBE) | 1.2 V |
JANKCBM2N5004-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers enhanced switching speed and lower on-resistance than many standard transistor dies, resulting in improved power efficiency and reduced heat generation. Its high voltage and current ratings provide robust performance in demanding industrial environments. The compact die size allows for superior integration in advanced semiconductor packages, offering engineers improved flexibility and reliability compared to typical transistor alternatives.
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Typical Applications
- Industrial power control circuits requiring efficient switching and robust thermal management for long-term reliability.
- High-frequency switching devices in power converters and inverters.
- Amplifier stages in electronic signal processing where gain and frequency response are critical.
- General-purpose transistor replacement in discrete and integrated semiconductor modules.
JANKCBM2N5004-Transistor-Die Brand Info
The JANKCBM2N5004-Transistor-Die is produced by a leading semiconductor manufacturer specializing in high-quality transistor dies tailored for industrial and commercial electronics. This product exemplifies the brand??s commitment to delivering reliable, high-performance components that support advanced electronic design requirements. It reflects rigorous quality control and industry-standard manufacturing processes to ensure consistent performance and durability.
FAQ
What is the maximum voltage rating of this transistor die?
The maximum collector-emitter voltage rating for this transistor die is 500 volts, making it suitable for applications requiring high-voltage switching capability without compromising device integrity.
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Can this transistor die handle high current loads?
Yes, the device supports a maximum collector current of 2 amperes, allowing it to manage moderate to high current levels typical in industrial switching and amplification circuits.
What temperature range can the transistor die operate within?
This transistor die is rated for an operating junction temperature up to 150??C, with a storage temperature range from -55??C to 150??C, ensuring reliable operation across a wide thermal spectrum.
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How does the transistor die??s on-resistance affect performance?
The low on-resistance characteristic reduces conduction losses during operation, which improves efficiency and minimizes thermal dissipation, ultimately enhancing the overall lifespan and reliability of the device.
Is this transistor die suitable for high-frequency applications?
Yes, with a gain bandwidth product of 100 MHz, it supports high-frequency switching and amplification tasks, making it ideal for pulse-width modulation and signal processing use cases.
