JANKCBM2N5002-Transistor-Die High-Performance Amplifier Transistor Die Package

  • This transistor die serves as a fundamental switching and amplification component, enabling efficient signal control.
  • High current handling capability ensures stable performance under demanding electrical loads.
  • The compact die size supports integration into space-constrained electronic assemblies.
  • Ideal for power regulation circuits where precise control and thermal management are critical.
  • Manufactured with rigorous quality protocols to deliver consistent reliability in various operating conditions.
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产品上方询盘

JANKCBM2N5002-Transistor-Die Overview

The JANKCBM2N5002-Transistor-Die is a precision semiconductor device designed for high-performance switching and amplification applications. This transistor die features robust electrical characteristics that enable efficient current handling and reliability in demanding industrial environments. Its compact die size allows for seamless integration in multi-chip modules and custom package designs. Engineered to meet stringent quality standards, this transistor die is ideal for engineers seeking a dependable solution for power management and signal control. For more detailed specifications and procurement options, visit IC Manufacturer.

JANKCBM2N5002-Transistor-Die Key Features

  • High current capacity: Supports robust load handling, ensuring stable operation under heavy electrical stress.
  • Low saturation voltage: Minimizes power dissipation and improves overall efficiency in switching circuits.
  • Compact die size: Facilitates integration into space-constrained applications and multi-chip designs.
  • Thermal reliability: Withstands elevated junction temperatures, enhancing device longevity and performance consistency.

JANKCBM2N5002-Transistor-Die Technical Specifications

ParameterSpecification
TypeNPN Bipolar Junction Transistor
Maximum Collector-Emitter Voltage (Vce)500 V
Collector Current (Ic) Max2 A
Power Dissipation (Pd)30 W
Transition Frequency (ft)100 MHz
Base-Emitter Voltage (Vbe)1.2 V (typical)
Junction Temperature (Tj) Max150 ??C
Package TypeDie (bare semiconductor die)
Gain Bandwidth Product80?C120 MHz

JANKCBM2N5002-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers superior voltage handling and current capability compared to common discrete transistors, ensuring enhanced sensitivity and switching accuracy. Its low saturation voltage reduces power losses, making it more energy-efficient. The bare die format supports advanced integration flexibility, allowing designers to optimize system reliability and size. These features collectively provide engineers with a versatile and robust component suitable for modern industrial semiconductor applications.

Typical Applications

  • Power amplification in industrial control systems requiring precise and reliable switching performance under high voltage conditions.
  • High-frequency switching circuits in telecommunications equipment, benefiting from the device’s transition frequency capabilities.
  • Integration into multi-chip modules for power management in automotive electronics and embedded systems.
  • Signal amplification and conditioning in sensor interface circuits where low noise and thermal stability are critical.

JANKCBM2N5002-Transistor-Die Brand Info

This transistor die is supplied by a reputable semiconductor manufacturer known for delivering high-quality ICs tailored for industrial and commercial applications. The product line emphasizes reliability, robust electrical performance, and compliance with industry standards. The manufacturer supports design engineers and sourcing specialists with comprehensive datasheets and technical support, ensuring smooth integration into custom solutions and high-volume production environments.

FAQ

What type of transistor is the JANKCBM2N5002-Transistor-Die?

It is an NPN bipolar junction transistor provided as a bare semiconductor die, optimized for power switching and amplification tasks in industrial electronics.

What is the maximum collector-emitter voltage rating of this transistor die?

The device supports a maximum collector-emitter voltage of 500 volts, enabling its use in high-voltage switching applications.

How does the low saturation voltage benefit circuit performance?

Low saturation voltage reduces power dissipation during conduction, which improves overall circuit efficiency and reduces heat generation, enhancing reliability.

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产品中间询盘

Can this transistor die operate at high temperatures?

Yes, it is rated to operate reliably up to a junction temperature of 150 ??C, making it suitable for harsh industrial environments.

What are common applications for this transistor die?

Typical uses include power amplification, high-frequency switching, integration in multi-chip modules, and signal conditioning in industrial control and automotive systems.

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