JANKCBM2N3700-Transistor-Die Overview
The JANKCBM2N3700-Transistor-Die is a high-performance NPN bipolar junction transistor die designed for robust amplification and switching applications. Engineered for seamless integration in semiconductor assemblies, this transistor die offers precise current gain and stable operation across a broad range of voltages and currents. Its compact die form factor facilitates customization in power modules and discrete component designs. Ideal for engineers and sourcing specialists seeking reliable transistor dies, it supports efficient thermal management and consistent electrical characteristics, ensuring dependable performance in industrial and automotive electronics. More information is available at IC Manufacturer.
JANKCBM2N3700-Transistor-Die Key Features
- High current gain (hFE): Enhances signal amplification efficiency, reducing the need for additional amplification stages.
- Maximum collector-emitter voltage (Vce): Supports up to 60V, allowing operation in medium voltage circuits with improved reliability.
- Low saturation voltage: Minimizes power loss and heat generation during switching, improving overall system efficiency.
- Compact die size: Enables easy integration into multi-chip modules or custom semiconductor packages, optimizing space usage.
JANKCBM2N3700-Transistor-Die Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (Vce) | 60 | V |
| Collector Current (Ic) | 200 | mA |
| Current Gain (hFE) | 100?C300 | ?? |
| Power Dissipation (Pd) | 400 | mW |
| Transition Frequency (fT) | 100 | MHz |
| Base-Emitter Voltage (Vbe) | 0.7 | V |
| Collector-Base Voltage (Vcb) | 60 | V |
| Operating Temperature Range | -55 to +150 | ??C |
JANKCBM2N3700-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior current gain and voltage handling compared to typical alternatives, enabling higher amplification accuracy and power efficiency. Its low saturation voltage reduces thermal stress, enhancing reliability in demanding industrial environments. The compact die format supports flexible integration, making it a preferred solution for engineers requiring a balance of performance and space optimization in semiconductor assemblies.
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Typical Applications
- Signal amplification circuits: Designed for medium power amplification, this transistor die excels in audio and RF signal processing systems requiring stable gain and low distortion.
- Switching regulators: Suitable for power management applications where efficient switching and low losses are critical.
- Automotive electronics: Used in control modules that demand high reliability under varying temperature conditions.
- Embedded systems: Ideal for integration into custom IC packages for embedded circuit designs requiring precise transistor performance.
JANKCBM2N3700-Transistor-Die Brand Info
The JANKCBM2N3700-Transistor-Die is a product offered by a leading semiconductor manufacturer specializing in discrete transistor components for industrial markets. This transistor die is manufactured with stringent quality controls to ensure consistent electrical characteristics and robustness. It reflects the company??s commitment to delivering high-quality, reliable semiconductor dies that support advanced electronic designs and enable innovative industrial applications.
FAQ
What is the maximum collector current rating of this transistor die?
The maximum collector current rating is 200 mA, which defines the highest continuous collector current the transistor die can safely conduct without damage under specified operating conditions.
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What voltage levels can this transistor die handle?
This transistor die supports a maximum collector-emitter voltage of 60 V and a collector-base voltage also rated at 60 V, making it suitable for medium-voltage applications commonly found in industrial electronics.
How does the current gain (hFE) of this die affect circuit design?
The current gain ranges from 100 to 300, providing robust amplification capability. A higher hFE reduces the base current needed for a desired collector current, improving overall circuit efficiency and simplifying driver stage requirements.
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What temperature range is this transistor die rated for?
The operating temperature range spans from -55??C to +150??C, ensuring reliable performance in harsh environments such as automotive and industrial systems exposed to wide temperature variations.
Can this transistor die be integrated into custom semiconductor packages?
Yes, the compact die form factor allows easy integration into multi-chip modules or custom packaging solutions, providing flexibility for designers working on tailored semiconductor assemblies.
