JANKCBM2N3440-Transistor-Die Overview
The JANKCBM2N3440-Transistor-Die is a high-performance semiconductor component designed for robust amplification and switching applications in industrial electronics. This transistor die offers reliable electrical characteristics with optimized current gain and voltage handling capabilities, making it suitable for integration in demanding circuits requiring precise control of power and signal integrity. Manufactured with advanced semiconductor processes, this die ensures consistent performance in compact layouts, supporting high-frequency and high-power operations. Engineers and sourcing specialists will find this transistor die ideal for custom module assembly or embedded circuit designs requiring durable and efficient transistor solutions. For detailed product sourcing and technical support, visit IC Manufacturer.
JANKCBM2N3440-Transistor-Die Key Features
- High Current Handling: Supports collector currents up to 15A, enabling effective power amplification in industrial applications.
- Voltage Endurance: With a collector-emitter voltage rating of 100V, it ensures stable operation under high-voltage conditions, critical for reliable switching.
- Efficient Gain Performance: Features a DC current gain (hFE) range of 10 to 50, providing flexibility in circuit amplification needs with predictable behavior.
- Thermal Stability: Designed with a maximum junction temperature of 150??C, the die maintains performance under thermal stress, enhancing device reliability.
JANKCBM2N3440-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor (BJT) Die |
| Collector-Emitter Voltage (VCEO) | 100 V |
| Collector Current (IC) | 15 A |
| DC Current Gain (hFE) | 10 to 50 |
| Power Dissipation (Ptot) | 125 W (at recommended conditions) |
| Transition Frequency (fT) | ?? 20 MHz |
| Maximum Junction Temperature (Tj) | 150 ??C |
| Package Type | Transistor Die (bare die format) |
| Base-Emitter Voltage (VBE) | Typically 0.7 V |
JANKCBM2N3440-Transistor-Die Advantages vs Typical Alternatives
This transistor die delivers superior current capacity and voltage tolerance compared to many standard alternatives, making it especially suitable for high-power industrial circuits. Its robust gain characteristics and thermal endurance enhance circuit stability and longevity under demanding electrical conditions. The bare die format allows for flexible integration in custom semiconductor assemblies, providing a distinct advantage in design versatility and thermal management over packaged transistors.
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Typical Applications
- Power Amplifiers: Ideal for use in industrial power amplifier stages where high current and voltage are required for driving loads efficiently and reliably.
- Switching Circuits: Suitable for high-speed switching applications in power management and control systems.
- Motor Control: Used in electronic motor drives to provide precise power regulation and robust switching performance.
- Custom Semiconductor Modules: Employed by manufacturers for integration into hybrid circuits or bespoke semiconductor modules requiring bare transistor dies.
JANKCBM2N3440-Transistor-Die Brand Info
The JANKCBM2N3440-Transistor-Die is a product of a leading semiconductor supplier specializing in high-quality bipolar junction transistors for industrial electronics. This transistor die reflects the brand??s commitment to precision manufacturing, reliability, and advanced semiconductor technology. Designed to meet stringent industry standards, the product supports a broad range of demanding applications, delivering consistent performance and compatibility with custom assembly processes.
FAQ
What is the maximum collector current rating of this transistor die?
The maximum collector current rating is 15 amperes, allowing the transistor die to handle substantial current loads in power amplification and switching applications without degradation.
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Can this transistor die operate at high temperatures?
Yes, it supports a maximum junction temperature of up to 150??C, ensuring reliable operation in environments with elevated thermal conditions and minimizing the risk of thermal failure.
Is this transistor suitable for high-frequency applications?
It provides a transition frequency (fT) of 20 MHz or higher, making it suitable for moderate high-frequency amplifier and switching circuits commonly found in industrial electronics.
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How does the bare die format benefit circuit designers?
The bare die format allows designers to integrate the transistor directly into custom semiconductor modules or hybrid circuits, improving thermal management and enabling compact, specialized device assembly.
What voltage levels can this transistor die handle safely?
This transistor die can safely handle collector-emitter voltages up to 100 volts, which is sufficient for a broad range of industrial power control and amplification tasks.
