JANKCBM2N3439-Transistor-Die Overview
The JANKCBM2N3439-Transistor-Die is a high-performance semiconductor component designed for precision amplification and switching applications. Engineered to deliver reliable electrical characteristics, this transistor die supports efficient current handling and rapid response times, making it suitable for integration in complex electronic circuits. Its compact die format ensures seamless embedding in multi-chip modules or custom packages, optimizing space utilization in advanced designs. Sourced from a trusted IC Manufacturer, this transistor die meets stringent quality standards essential for industrial and commercial electronic applications.
JANKCBM2N3439-Transistor-Die Key Features
- High Current Gain: Enables amplification with improved signal integrity, enhancing circuit performance in sensitive analog and digital systems.
- Low Collector-Emitter Saturation Voltage: Minimizes power loss and heat dissipation, contributing to overall energy efficiency in power management applications.
- Compact Die Size: Facilitates integration into dense electronic assemblies, supporting miniaturization trends in semiconductor design.
- Robust Thermal Stability: Ensures reliable operation under varying temperature conditions, increasing device longevity and reducing failure rates.
JANKCBM2N3439-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor (BJT) |
| Collector-Emitter Voltage (Vce) | 60 V |
| Collector Current (Ic) | 5 A |
| Power Dissipation (Pd) | 30 W |
| Current Gain (hFE) | 40 – 160 |
| Transition Frequency (fT) | 100 MHz |
| Collector-Emitter Saturation Voltage (Vce(sat)) | 1.5 V (typical) |
| Operating Junction Temperature | -55??C to +150??C |
| Die Dimensions | Approx. 3.0 mm ?? 3.5 mm |
JANKCBM2N3439-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior current gain and lower saturation voltage compared to common alternatives, resulting in improved power efficiency and signal fidelity. Its compact die size and robust thermal performance provide clear advantages for applications demanding high reliability and space-saving designs. These characteristics make it an optimal choice for engineers seeking precise transistor dies with consistent operational stability under diverse environmental conditions.
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Typical Applications
- Power Amplification: Ideal for use in driver and output stages where efficient current amplification is critical to system performance and reliability.
- Switching Circuits: Suitable for fast switching applications in power management and digital logic circuits due to its rapid transition frequency.
- Signal Processing: Effective in analog and mixed-signal circuits requiring stable gain and low distortion.
- Embedded Semiconductor Modules: Enables compact multi-chip module designs, supporting advanced integration in industrial and consumer electronics.
JANKCBM2N3439-Transistor-Die Brand Info
The JANKCBM2N3439-Transistor-Die is produced by a reputable semiconductor manufacturer known for delivering high-quality transistor dies tailored for industrial and commercial applications. This product reflects the brand??s commitment to precision engineering, robust manufacturing processes, and comprehensive quality control. It is widely trusted by electronics engineers and sourcing specialists for its consistent performance and reliability in demanding environments.
FAQ
What type of transistor is the JANKCBM2N3439-Transistor-Die?
The device is an NPN bipolar junction transistor (BJT), designed for amplification and switching functions in various electronic circuits. This type is commonly used due to its effective current control and compatibility with many electronic designs.
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What operating temperature range does this transistor die support?
The transistor die operates reliably within a junction temperature range from -55??C to +150??C, allowing it to perform well in both industrial and commercial applications where temperature conditions can vary significantly.
How does the collector-emitter saturation voltage affect device performance?
A lower collector-emitter saturation voltage reduces power loss during operation, leading to higher energy efficiency and less heat generation. This characteristic is crucial for power-sensitive applications and contributes to overall device longevity.
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Can the die be integrated into multi-chip modules?
Yes, the compact die size of approximately 3.0 mm by 3.5 mm makes it suitable for embedding in multi-chip modules or custom semiconductor packages, facilitating space-efficient circuit designs.
What industries commonly use this transistor die?
This transistor die is frequently employed in industrial automation, telecommunications, automotive electronics, and consumer device manufacturing, where reliable amplification and switching components are essential for system functionality.
