JANKCBL2N3440-Transistor-Die High-Power Amplification Transistor Chip Package

  • This transistor die offers precise control of current flow, enabling efficient signal amplification in circuits.
  • Its electrical characteristics ensure consistent performance, which is critical for stable device operation.
  • The compact die size allows for space-saving integration on circuit boards, optimizing layout design.
  • Ideal for use in power management modules, it enhances energy efficiency and device responsiveness.
  • Manufactured under strict quality controls, it delivers reliable operation over extended usage periods.
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产品上方询盘

JANKCBL2N3440-Transistor-Die Overview

The JANKCBL2N3440-Transistor-Die is a high-performance semiconductor component designed for robust amplification and switching applications. Engineered with precision, it offers reliable electrical characteristics essential for modern electronics, including high current gain and voltage tolerance. This transistor die is optimized for integration into custom semiconductor modules or discrete component assemblies where space and thermal dissipation are critical. Its design enables consistent operation under varied environmental conditions, making it suitable for industrial and automotive electronics. For sourcing and engineering teams, this component delivers a dependable foundation for enhancing circuit efficiency and overall device reliability. Visit IC Manufacturer for detailed technical support and supply options.

JANKCBL2N3440-Transistor-Die Key Features

  • High current gain: Ensures efficient signal amplification with minimal input power, improving overall circuit performance.
  • Robust voltage ratings: Supports high voltage operation, enhancing reliability in demanding power switching scenarios.
  • Thermal stability: Designed to maintain consistent performance under elevated temperature conditions, reducing the risk of thermal runaway.
  • Compact die size: Facilitates integration into space-constrained applications, supporting miniaturized device designs.

JANKCBL2N3440-Transistor-Die Technical Specifications

ParameterSpecification
TypeNPN Bipolar Junction Transistor Die
Collector-Emitter Voltage (Vce)60 V
Collector Current (Ic)5 A
Current Gain (hFE)100 (typical)
Power Dissipation (Pd)40 W
Transition Frequency (fT)150 MHz
Package TypeBare Die (unpackaged)
Operating Temperature Range-55??C to +150??C
Base-Emitter Voltage (Vbe)1.2 V (max)

JANKCBL2N3440-Transistor-Die Advantages vs Typical Alternatives

This transistor die provides superior current handling and voltage tolerance compared to many standard discrete transistors. Its high gain and thermal stability improve circuit efficiency and reliability, especially in high-power and high-frequency applications. The bare die format allows for customized packaging and integration, offering flexibility that typical packaged transistors cannot match. These features make it a preferred choice for engineers seeking optimized performance and enhanced design versatility.

Typical Applications

  • Power amplifiers in industrial control systems requiring high current gain and stable operation under varying thermal conditions.
  • Switching regulators and power management circuits in automotive electronics demanding reliable voltage and current handling.
  • High-frequency signal amplification in communication devices where transition frequency and gain are critical.
  • Custom semiconductor modules where bare die components enable tailored packaging solutions for space-constrained designs.

JANKCBL2N3440-Transistor-Die Brand Info

The JANKCBL2N3440-Transistor-Die is produced by a leading semiconductor manufacturer known for delivering quality, performance, and reliability in transistor technology. This product exemplifies the brand??s commitment to innovation in discrete semiconductor devices, offering raw die solutions tailored for specialized applications. Its engineering heritage ensures compatibility with rigorous industrial standards, providing customers with confidence in deployment across diverse electronic systems.

FAQ

What is the maximum collector current rating of this transistor die?

The maximum collector current for this transistor die is 5 amperes. This rating allows it to handle significant current loads in power amplification and switching applications without compromising performance.

Can this transistor die operate reliably at high temperatures?

Yes, the transistor die is rated for operation from -55??C up to +150??C, ensuring stable performance and thermal reliability in demanding environments such as automotive and industrial electronics.

Is this a packaged transistor or a bare die component?

This product is a bare transistor die, meaning it is supplied unpackaged to allow for custom integration and packaging according to specific application requirements.

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产品中间询盘

What type of transistor is the JANKCBL2N3440?

It is an NPN bipolar junction transistor (BJT) die, designed primarily for amplification and switching with high gain and voltage capabilities suitable for industrial use.

What are the key electrical parameters that define its switching performance?

The key parameters include a collector-emitter voltage of 60 V, a typical current gain of 100, and a transition frequency of 150 MHz, all of which contribute to efficient switching and signal amplification at high speeds.

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