JANKCBL2N2222A-Transistor-Die Overview
The JANKCBL2N2222A-Transistor-Die is a high-performance bipolar junction transistor die widely used in switching and amplification applications. Offering a robust collector current capacity and fast switching speed, this transistor die is ideal for industrial electronics and embedded systems. Its compact die form factor facilitates integration into custom semiconductor packages or hybrid circuits, making it a versatile choice for engineers seeking reliable, discrete transistor solutions. Designed to meet rigorous electrical and thermal demands, this product ensures consistent operation in demanding environments. For sourcing and detailed specifications, visit IC Manufacturer.
JANKCBL2N2222A-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor (BJT) |
| Collector-Emitter Voltage (Vce) | 40 V (maximum) |
| Collector Current (Ic) | 800 mA (maximum) |
| Power Dissipation | 500 mW (die level) |
| Transition Frequency (fT) | 300 MHz (typical) |
| Base-Emitter Voltage (Vbe) | 1.2 V (typical at 10 mA) |
| Current Gain (hFE) | 100 to 300 (depending on Ic and Vce) |
| Package Type | Bare transistor die (for custom packaging) |
| Junction Temperature | 150 ??C (maximum) |
JANKCBL2N2222A-Transistor-Die Key Features
- High collector current capability: Enables efficient switching and amplification in medium-power circuits, supporting loads up to 800 mA.
- Fast transition frequency: Provides swift switching performance suitable for high-speed signal processing, enhancing overall circuit responsiveness.
- Compact die format: Facilitates integration into custom semiconductor packages or hybrid modules, allowing flexibility in advanced design applications.
- Robust thermal tolerance: Maintains stable operation at junction temperatures up to 150 ??C, ensuring reliability in harsh industrial environments.
Typical Applications
- General-purpose switching in industrial control systems, where reliable and fast transistor operation is critical for automation tasks.
- Signal amplification in audio and RF circuits requiring moderate gain with low distortion and high linearity.
- Driver stages in relay or motor control circuits, providing sufficient current to actuate external devices.
- Custom semiconductor packaging and hybrid IC designs, where bare die integration enables tailored electrical and thermal performance.
JANKCBL2N2222A-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers a compelling combination of high current capacity, fast switching frequency, and thermal robustness that often surpasses typical discrete alternatives. Its bare die format provides engineers with enhanced flexibility to optimize packaging and thermal management for specific industrial applications. Compared to packaged transistors, it allows for improved integration and potentially lower parasitic inductances, contributing to higher efficiency and accuracy in demanding electronic circuits.
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JANKCBL2N2222A-Transistor-Die Brand Info
The JANKCBL2N2222A transistor die is manufactured by JANKC Semiconductor, a well-established supplier specializing in discrete semiconductor components for industrial and consumer electronics. Known for their stringent quality control and process consistency, JANKC provides transistor dies that support high-volume manufacturing and custom packaging solutions. This product line reflects JANKC??s commitment to delivering reliable, high-performance components that meet the diverse needs of electronics design engineers and sourcing professionals worldwide.
FAQ
What is the maximum collector current rating for the JANKCBL2N2222A transistor die?
The maximum collector current is rated at 800 mA. This allows the transistor die to handle moderate power loads typical in switching and amplification applications without compromising reliability or performance.
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Can the transistor die operate at high temperatures?
Yes, the device supports a maximum junction temperature






