JANKCBH2N2222A-Transistor-Die Overview
The JANKCBH2N2222A-Transistor-Die is a high-performance NPN bipolar junction transistor die widely utilized in switching and amplification applications. Designed for efficient current handling and fast switching speeds, this transistor die offers stable operation in low to medium power circuits. Its robust electrical characteristics make it suitable for integration in industrial control systems, signal processing modules, and general-purpose amplification tasks. Sourced from IC Manufacturer, it represents a reliable semiconductor component optimized for engineers and sourcing specialists requiring precise transistor dies for custom assembly or hybrid microcircuit design.
JANKCBH2N2222A-Transistor-Die Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN | |
| Collector-Emitter Voltage (Vceo) | 40 | V |
| Collector Current (Ic) | 600 | mA |
| Power Dissipation (Pd) | 500 | mW |
| Current Gain (hFE) | 100 – 300 | |
| Transition Frequency (fT) | 250 | MHz |
| Base-Emitter Voltage (Vbe) | 0.7 | V |
| Package Type | Die (bare silicon) |
JANKCBH2N2222A-Transistor-Die Key Features
- High current capability: Supports collector currents up to 600mA, enabling robust switching and amplification in demanding circuits.
- Wide voltage tolerance: Collector-emitter voltage rating of 40V ensures reliable operation in medium-voltage applications.
- Fast transition frequency: Transition frequency of 250MHz allows high-speed switching, critical for efficient signal processing.
- Bare die format: Facilitates custom packaging and integration into hybrid modules or multi-chip arrays, offering design flexibility.
Typical Applications
- General-purpose amplification in analog circuits, where stable gain and linearity are required for audio or signal conditioning.
- Switching applications in power management circuits, enabling efficient control of loads up to medium power levels.
- Industrial automation systems that demand reliable semiconductor devices for control signal amplification and switching tasks.
- Custom hybrid microcircuit design where bare transistor dies are assembled for miniaturized or specialized electronic modules.
JANKCBH2N2222A-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers significant advantages over typical packaged transistors by providing enhanced integration flexibility and improved thermal management due to its bare die format. Its robust current and voltage ratings combined with a high transition frequency deliver efficient switching and amplification performance. The ability to embed this die directly into custom assemblies reduces parasitic elements and improves overall circuit reliability and precision, making it a preferred choice for engineers focused on optimizing power, sensitivity, and integration.
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JANKCBH2N2222A-Transistor-Die Brand Info
The JANKCBH2N2222A transistor die is manufactured by JANKC Semiconductor, a recognized supplier specializing in discrete semiconductor components and die-level devices. JANKC is known for delivering high-quality transistor dies that cater to industrial and commercial electronics markets. Their products are widely used by electronics manufacturers requiring bare die components for hybrid circuit applications, offering consistent performance and strict quality control to meet demanding engineering standards.
FAQ
What is the maximum collector current rating for this transistor die?
The maximum collector current rating is 600mA, allowing the transistor to handle moderate power switching and amplification loads safely within its specified limits.
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Can this transistor die be used in high-frequency applications?
Yes, with a transition frequency of 250MHz, this transistor die supports high-speed switching and amplification tasks, making it suitable







