JANKCBH2N2221A-Transistor-Die Overview
The JANKCBH2N2221A-Transistor-Die is a high-performance NPN bipolar junction transistor die optimized for amplification and switching applications. It offers robust electrical characteristics suitable for medium-power circuits, providing reliable current gain and switching speed. Designed to integrate seamlessly into semiconductor assemblies, this transistor die supports efficient thermal management and stable operation under varying load conditions. Ideal for industrial electronics, the device is manufactured following rigorous quality standards by IC Manufacturer, ensuring dependable performance for demanding engineering and sourcing applications.
JANKCBH2N2221A-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor (BJT) |
| Collector-Emitter Voltage (VCEO) | 40 V |
| Collector Current (IC) | 800 mA (max) |
| Power Dissipation (Ptot) | 500 mW (max) |
| DC Current Gain (hFE) | 100 to 300 (typical range) |
| Transition Frequency (fT) | 300 MHz (typical) |
| Base-Emitter Voltage (VBE) | 0.65 V (typical at IC = 10 mA) |
| Junction Temperature (TJ) | 150??C (max) |
JANKCBH2N2221A-Transistor-Die Key Features
- High Current Handling: Supports collector currents up to 800 mA, enabling efficient medium-power amplification and switching.
- Wide Voltage Range: Collector-emitter voltage rating of 40 V allows use in various voltage domains, providing design flexibility.
- Fast Switching Speed: Transition frequency near 300 MHz facilitates high-speed signal processing and reduces switching losses.
- Stable Current Gain: Typical hFE between 100 and 300 ensures consistent amplification performance across operating conditions.
- Thermal Robustness: Maximum junction temperature of 150??C supports reliable operation in harsh industrial environments.
Typical Applications
- Signal amplification in audio and communication circuits where medium power gain and linearity are required for clear output.
- Switching elements in power management modules, enabling efficient control of loads in industrial control systems.
- Driver stages for relays, LEDs, and small motors, providing amplification and switching capability in embedded electronics.
- General-purpose transistor die for integration into custom semiconductor packages or hybrid circuits in industrial electronics.
JANKCBH2N2221A-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers a balanced combination of voltage tolerance, current capacity, and switching speed that outperforms many generic alternatives. Its stable current gain and robust thermal limits enhance reliability in industrial applications. The die format enables direct integration into custom semiconductor packages, improving thermal management and reducing parasitic losses compared to packaged transistors, resulting in better overall efficiency and precision.
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JANKCBH2N2221A-Transistor-Die Brand Info
The JANKCBH2N2221A-Transistor-Die is produced by a reputable semiconductor manufacturer specializing in discrete transistor dies and integrated components for industrial electronics. The brand is known for delivering high-quality transistor dies designed to meet stringent electrical and thermal standards required by modern control, automation, and communication systems. Their portfolio includes a variety of bipolar junction transistor dies that comply with industrial-grade reliability and performance benchmarks, supporting engineers and sourcing specialists with dependable components.
FAQ
What is the maximum collector current rating of this transistor die?
The maximum collector current rating is 800 mA, which allows it to handle medium-power applications such as switching and amplification without thermal stress when properly managed.
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Application Automotive Electronics, Energy and Power, Industrial Automation
| Application | Automotive Electronics, Energy and Power, Industrial Automation |
|---|







