JANKCBF2N5004-Transistor-Die Overview
The JANKCBF2N5004-Transistor-Die is a high-performance semiconductor device designed for efficient switching and amplification in industrial electronic circuits. This transistor die delivers reliable electrical characteristics with optimized gain and breakdown voltage, ensuring consistent operation in demanding applications. Its compact die format supports integration into custom module assemblies, enabling engineers to tailor device performance to specific system requirements. Manufactured under stringent quality controls, this component from IC Manufacturer offers a dependable solution for power management, signal processing, and electronic control functions.
JANKCBF2N5004-Transistor-Die Key Features
- High voltage tolerance: Supports up to 500V collector-emitter voltage, enabling robust operation in high-voltage circuits.
- Optimized current handling: Capable of continuous collector current up to 4A, suitable for medium-power applications requiring reliable current flow.
- Stable gain characteristics: Provides consistent DC current gain (hFE) across operating conditions, improving signal amplification accuracy.
- Compact die size: Facilitates seamless integration into custom semiconductor packages or multi-chip modules, enhancing design flexibility.
JANKCBF2N5004-Transistor-Die Technical Specifications
| Parameter | Value | Unit | Description |
|---|---|---|---|
| Collector-Emitter Voltage (VCEO) | 500 | V | Maximum voltage between collector and emitter terminals |
| Collector Current (IC) | 4 | A | Maximum continuous collector current |
| DC Current Gain (hFE) | 40 to 160 | Unitless | Range of current gain at specified test conditions |
| Power Dissipation (Pd) | 50 | W | Maximum power dissipation rating |
| Transition Frequency (fT) | 40 | MHz | Frequency at which current gain drops to unity |
| Collector-Base Voltage (VCBO) | 600 | V | Maximum voltage between collector and base terminals |
| Emitter-Base Voltage (VEBO) | 5 | V | Maximum voltage between emitter and base terminals |
| Storage Temperature Range | -55 to +150 | ??C | Permissible storage temperature limits |
JANKCBF2N5004-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior voltage handling and current capacity compared to many standard alternatives, enhancing circuit robustness and longevity. Its stable gain and power dissipation ratings contribute to reliable performance under varying load conditions. The compact die format supports efficient integration, reducing parasitic effects and improving overall system efficiency. These features make it a preferred choice for engineers seeking dependable, high-voltage transistor solutions.
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Typical Applications
- Power switching circuits where high voltage and medium current ratings are essential, such as motor control and power converters, ensuring efficient energy management.
- Amplifier stages in industrial signal processing systems requiring stable gain over wide voltage ranges.
- Custom semiconductor module integration, enabling tailored electronic solutions in embedded systems.
- Electronic control units (ECUs) used in automation and automotive electronics that demand reliable transistor performance.
JANKCBF2N5004-Transistor-Die Brand Info
This transistor die is produced by a reputable semiconductor manufacturer known for delivering high-quality discrete components optimized for industrial applications. The product is part of a portfolio designed to meet stringent performance and reliability standards, supporting engineers in developing resilient electronic systems. Its consistent manufacturing process ensures device uniformity, essential for high-volume production and long-term field reliability.
FAQ
What is the maximum voltage rating of this transistor die?
The transistor die supports a maximum collector-emitter voltage of 500 volts, allowing it to operate safely in high-voltage circuit environments without breakdown risk.
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Can this device handle continuous high current loads?
Yes, it is rated for a continuous collector current of up to 4 amperes, making it suitable for medium-power applications requiring steady current flow.
Is this transistor die suitable for high-frequency applications?
With a transition frequency of approximately 40 MHz, this device can be used in moderately high-frequency circuits, though it is primarily optimized for power switching and amplification.
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What temperature range can this transistor die withstand during storage?
The die can be safely stored within a temperature range of -55??C to +150??C, ensuring stability during transportation and warehousing.
How does the die format benefit circuit designers?
The compact die format allows for precise integration into custom semiconductor packages or multi-chip modules, reducing parasitic losses and improving thermal management in complex electronic assemblies.
