JANKCBF2N5002-Transistor-Die Overview
The JANKCBF2N5002-Transistor-Die is a high-performance semiconductor component designed for precision switching and amplification applications. This transistor die exhibits excellent electrical characteristics, including a high collector-emitter voltage rating and optimized current handling capabilities, making it suitable for demanding industrial and electronic systems. Its compact die form enables seamless integration into custom packaging or hybrid circuits, offering engineers flexibility in design and improved thermal management. Manufactured with advanced semiconductor processes, it ensures consistent reliability and performance under various operating conditions, providing sourcing specialists and design engineers a dependable solution from IC Manufacturer.
JANKCBF2N5002-Transistor-Die Key Features
- High Voltage Handling: Supports a collector-emitter voltage that enables operation in high-voltage switching circuits, enhancing device versatility.
- Robust Current Capacity: Capable of managing significant collector current, ensuring reliable performance in power amplification and control tasks.
- Excellent Gain Characteristics: Provides stable DC current gain, improving signal amplification accuracy and circuit efficiency.
- Compact Die Format: Facilitates integration into custom modules and hybrid assemblies, optimizing space and thermal dissipation.
JANKCBF2N5002-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Collector-Emitter Voltage (VCEO) | 500 V |
| Collector Current (IC) | 2 A |
| DC Current Gain (hFE) | 50 to 200 |
| Collector-Base Voltage (VCBO) | 600 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Power Dissipation (Ptot) | 40 W (on die level) |
| Transition Frequency (fT) | 50 MHz |
| Junction Temperature (Tj) | 150 ??C |
JANKCBF2N5002-Transistor-Die Advantages vs Typical Alternatives
This transistor die delivers superior voltage and current ratings compared to common low-power alternatives, making it ideal for high-demand industrial circuits. Its robust gain stability enhances signal fidelity while the compact die format allows for versatile integration and improved thermal management. These benefits translate into higher efficiency, reliability, and design flexibility for engineering teams aiming to optimize power and switching functions.
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Typical Applications
- Industrial power control modules where high voltage switching and reliable current handling are critical, enabling efficient motor drives and power regulation.
- Signal amplification stages in electronic instrumentation that require stable gain and low distortion.
- Custom semiconductor module assembly for hybrid circuits, allowing tailored solutions in compact form factors.
- Switching elements in power converters and inverters, benefiting from high voltage endurance and thermal resilience.
JANKCBF2N5002-Transistor-Die Brand Info
Produced by a reputable semiconductor manufacturer, this transistor die is part of a specialized product line focusing on high-voltage and high-current discrete components. The brand emphasizes precision manufacturing standards and quality control, ensuring each die meets stringent electrical and thermal performance criteria. This commitment supports engineers and sourcing specialists seeking reliable, industrial-grade transistor dies for advanced electronics design and production.
FAQ
What is the maximum collector-emitter voltage rating of this transistor die?
The maximum collector-emitter voltage rating is 500 volts, allowing the device to operate safely in high-voltage switching and amplification applications without breakdown.
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Can this transistor die handle high current loads?
Yes, it supports a collector current of up to 2 amperes, making it suitable for medium-power circuits where reliable current handling is essential.
What is the typical DC current gain range for this device?
The DC current gain (hFE) ranges between 50 and 200, providing stable amplification characteristics beneficial for precision signal processing.
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Is this transistor die suitable for integration in custom semiconductor modules?
Absolutely. Its compact die format is designed to facilitate integration into hybrid circuits and custom module assemblies, optimizing space and thermal performance.
What operating temperature range can the transistor die sustain?
The die is rated for a maximum junction temperature of 150 ??C, ensuring reliable operation under demanding thermal conditions typically encountered in industrial environments.
