JANKCBF2N3440-Transistor-Die High-Power Amplifier Transistor Die by JANKCBF2N3440

  • This transistor die controls electrical current flow, enabling efficient switching in electronic circuits.
  • Its compact package reduces board space, supporting dense component layouts in modern devices.
  • Designed for power handling, it ensures stable operation under varying electrical loads.
  • Ideal for use in power management modules, improving energy efficiency in consumer electronics.
  • Manufactured with quality assurance processes to maintain consistent performance and durability.
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产品上方询盘

JANKCBF2N3440-Transistor-Die Overview

The JANKCBF2N3440-Transistor-Die is a high-performance NPN transistor die designed for industrial and power electronics applications. It offers robust electrical characteristics suitable for switching and amplification in demanding environments. Featuring a silicon-based structure optimized for high current and voltage handling, this transistor die ensures reliable operation with excellent thermal stability and gain parameters. Its compact die form factor enables seamless integration into customized semiconductor modules and power discrete assemblies. Engineers and sourcing specialists benefit from its proven durability and consistent performance, making it a dependable choice in power management and control circuits. For more details, visit IC Manufacturer.

JANKCBF2N3440-Transistor-Die Key Features

  • High Collector Current Capability: Supports continuous collector currents up to 10A, enabling efficient power switching in high-load applications.
  • Elevated Collector-Emitter Voltage: Rated for a maximum voltage of 100V, providing strong voltage tolerance in industrial circuits.
  • Optimized Gain (hFE): Offers current gain between 20 to 70, which improves amplification accuracy and reduces power loss.
  • Thermal Efficiency: Designed for an operating junction temperature up to 150??C, ensuring reliability under elevated thermal stress.

JANKCBF2N3440-Transistor-Die Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (Vce)100V
Collector Current (Ic)10A
Power Dissipation (Pd)50W
Gain Bandwidth Product (fT)4MHz
DC Current Gain (hFE)20?C70??
Transition Frequency (fT)4MHz
Junction Temperature (Tj)150??C
Package TypeTransistor Die??

JANKCBF2N3440-Transistor-Die Advantages vs Typical Alternatives

This transistor die excels compared to typical discrete transistors through its higher current and voltage ratings combined with a reliable gain range. Its optimized thermal tolerance supports extended operation under industrial conditions, while the die format allows for integration flexibility within power modules. These attributes deliver enhanced efficiency, durability, and precise control, making it a superior alternative in power switching and amplification roles.

Typical Applications

  • High-current switching circuits in power supply and motor control systems where robust voltage and current handling are critical for performance.
  • Amplification stages in industrial signal processing requiring consistent gain and thermal stability.
  • Custom semiconductor module assembly for power management, benefiting from the die form factor for compact and efficient designs.
  • Load driving components in automotive and industrial automation equipment demanding reliable transistor performance.

JANKCBF2N3440-Transistor-Die Brand Info

The JANKCBF2N3440-Transistor-Die is produced by a respected semiconductor manufacturer known for delivering high-quality, reliable transistor dies. This product reflects the brand??s commitment to meeting stringent industrial standards and providing components optimized for power electronics applications. Its design caters to engineers seeking consistent electrical characteristics and integration flexibility, backed by comprehensive quality assurance and technical support.

FAQ

What is the maximum collector current this transistor die can handle?

The transistor die supports a maximum continuous collector current of 10 amperes, making it suitable for high-load switching and amplification applications in industrial environments.

What is the voltage rating of this transistor die?

It has a collector-emitter voltage rating of 100 volts, allowing it to operate safely in circuits with moderately high voltage levels without risk of breakdown.

How does the gain range affect transistor performance?

The gain (hFE) range of 20 to 70 provides a balance between amplification efficiency and stability, ensuring accurate signal amplification and reduced power dissipation in applications.

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产品中间询盘

Can this transistor die operate at elevated temperatures?

Yes, it is rated for junction temperatures up to 150??C, which enhances its reliability and performance in demanding thermal environments often encountered in industrial electronics.

Is the transistor die suitable for integration into custom power modules?

Absolutely. The die format offers flexibility for embedding into custom semiconductor packages or power modules, allowing design engineers to optimize space and performance in their assemblies.

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