JANKCBF2N2907A-Transistor-Die Overview
The JANKCBF2N2907A-Transistor-Die is a high-performance PNP bipolar junction transistor (BJT) die designed for integration in discrete and hybrid semiconductor applications. Engineered for robust switching and amplification in medium power circuits, this transistor die offers reliable operation with optimized gain characteristics and voltage ratings. Its compact die form factor enables seamless embedding into custom packages or modules, meeting the diverse needs of power management, signal processing, and industrial control systems. Sourced from a trusted IC Manufacturer, this transistor die delivers consistent electrical performance and thermal stability for demanding engineering applications.
JANKCBF2N2907A-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | PNP Bipolar Junction Transistor Die |
| Collector-Emitter Voltage (Vce) | 40 V (max) |
| Collector Current (Ic) | 600 mA (max) |
| Power Dissipation (Pd) | 800 mW (typical die rating) |
| Current Gain (hFE) | 100 to 300 (typical) |
| Transition Frequency (fT) | 100 MHz (typical) |
| Junction Temperature (Tj) | 150 ??C (max) |
| Package Type | Bare Die (for custom packaging) |
| Base-Emitter Voltage (Vbe) | 1.2 V (typical at Ic = 10 mA) |
JANKCBF2N2907A-Transistor-Die Key Features
- High current handling capability: Supports collector currents up to 600 mA, enabling use in moderate power switching and amplification tasks.
- Optimized gain characteristics: Current gain range of 100 to 300 facilitates efficient signal amplification with low distortion.
- Compact bare die form: Allows flexible integration into custom semiconductor packages or hybrid circuits, enhancing design adaptability.
- Robust voltage rating: Collector-emitter voltage rating of 40 V ensures reliable operation in a variety of power supply and control environments.
Typical Applications
- General-purpose amplification and switching in industrial control and automation circuits where discrete transistor dies are integrated into custom assemblies.
- Signal amplification in low to medium power audio and sensor interface circuits requiring stable gain performance.
- Power management circuits that need reliable PNP transistor dies for current regulation and switching tasks.
- Hybrid integrated circuits and multi-chip modules where compact transistor dies are embedded for enhanced circuit density and performance.
JANKCBF2N2907A-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers a compelling balance of current capacity and voltage rating in a bare die format, allowing engineers to optimize package design and thermal management. Compared to packaged alternatives, it provides enhanced integration flexibility and potentially improved reliability in high-density applications. The device??s stable gain and frequency response support precise amplification and switching, making it a preferred choice for custom semiconductor assemblies and industrial-grade electronic modules.
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JANKCBF2N2907A-Transistor-Die Brand Info
The JANKCBF2N2907A transistor die corresponds to a variant of the widely recognized 2N2907A PNP transistor lineage, originally developed by major semiconductor manufacturers such as ON Semiconductor, Fairchild, and Texas Instruments. These transistors are known for their robust performance in analog and switching applications. The die version is typically supplied by specialized semiconductor foundries and IC manufacturers focused on bare die distribution for custom packaging and hybrid circuit integration. This product supports design engineers requiring proven transistor technology in flexible form factors for industrial and commercial electronics.
FAQ
What is the maximum collector current rating of this transistor die?
The transistor die supports a maximum collector current of 600 mA, making it suitable for medium power amplification and switching applications in industrial circuits.
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How does the bare die format benefit electronic design?
The bare die format allows engineers to integrate the transistor directly into custom packages or multi-chip modules. This improves packaging flexibility, optimizes thermal performance, and enables higher circuit density than traditional packaged transistors.
