JANKCBF2N2222A-Transistor-Die Overview
The JANKCBF2N2222A-Transistor-Die is a high-performance bipolar junction transistor (BJT) designed for robust switching and amplification in electronic circuits. This transistor die provides reliable current gain and fast switching capabilities, making it an essential component for industrial and consumer applications. Engineered with precision for stable operation under various conditions, it supports moderate voltage and current levels with low saturation voltage. Ideal for integration in compact assemblies, it offers consistent performance and facilitates efficient thermal management. For sourcing and technical details, visit the IC Manufacturer platform.
JANKCBF2N2222A-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor (BJT) |
| Maximum Collector-Emitter Voltage (Vce) | 40 V |
| Collector Current (Ic) | 800 mA (continuous) |
| Gain Bandwidth Product (fT) | ?? 300 MHz |
| DC Current Gain (hFE) | 100 ?C 300 (depending on operating point) |
| Power Dissipation (Pd) | 625 mW (die level) |
| Transition Frequency | Up to 300 MHz |
| Package Type | Die (bare silicon die for hybrid integration) |
JANKCBF2N2222A-Transistor-Die Key Features
- High current gain ensures efficient amplification with minimal input drive, enabling low-power control signals to switch larger loads effectively.
- Fast switching speed supports high-frequency applications, reducing signal distortion and improving response times in switching circuits.
- Compact die format facilitates direct integration into hybrid modules and custom packages, optimizing space and thermal dissipation in complex assemblies.
- Robust voltage and current handling ensures reliable operation under industrial-level stress, enhancing system durability and reliability.
Typical Applications
- Signal amplification in analog circuits for industrial control systems, where precise and stable gain is required under varying load conditions.
- Switching elements in low-voltage power supply circuits to control motors, relays, and LEDs with quick response times.
- Driver stages for audio amplifiers or sensor conditioning circuits, maximizing signal integrity and minimizing distortion.
- Embedded circuitry in hybrid modules and custom semiconductor packages where space constraints and heat dissipation are critical.
JANKCBF2N2222A-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers a compelling combination of high gain, fast switching, and low saturation voltage, providing superior efficiency compared to generic transistor options. Its bare die format allows for seamless integration into compact hybrid circuits, improving thermal management and reducing parasitic losses. This makes it advantageous for designers seeking reliable, high-performance transistors that meet stringent industrial standards without compromising space or power consumption.
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JANKCBF2N2222A-Transistor-Die Brand Info
The JANKCBF2N2222A is a recognized variant of the classic 2N2222 transistor family, widely produced by various semiconductor manufacturers globally. Typically, this transistor die is sourced from established industrial IC manufacturers specializing in discrete semiconductor components. These manufacturers ensure quality through stringent wafer fabrication and testing processes, delivering consistent transistor dies suitable for both prototyping and high-volume production. The 2N2222 series is a staple in electronics design, known for its versatility, reliability, and cost-effectiveness.
FAQ
What is the maximum collector current rating of this transistor die?
The transistor die is rated for a continuous collector current of up to 800 mA, suitable for moderate power switching and amplification tasks in industrial and consumer electronics.
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Can this transistor die handle high-frequency signals effectively?
Yes, with a gain bandwidth product around 300 MHz, it supports high-frequency operation, making it suitable for switching and amplification in RF and fast digital circuits.
