JANKCBD2N5004-Transistor-Die Overview
The JANKCBD2N5004-Transistor-Die is a high-performance semiconductor component designed for efficient power switching and amplification in industrial electronics. This transistor die offers robust electrical characteristics, enabling reliable operation under demanding conditions. Engineered for integration into power modules and custom circuit designs, it supports optimized thermal management and high current handling capabilities. Ideal for engineers sourcing discrete dies for advanced power electronics applications, this product delivers precision and consistency in performance. For further details, visit IC Manufacturer.
JANKCBD2N5004-Transistor-Die Key Features
- High current capacity: Supports substantial collector current, ensuring suitability for power switching tasks.
- Low saturation voltage: Minimizes power loss during conduction, improving overall efficiency.
- Compact die size: Enables seamless integration in multi-chip modules and compact power electronics assemblies.
- Robust thermal performance: Designed to withstand elevated junction temperatures, enhancing device reliability under load.
JANKCBD2N5004-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Collector-Emitter Voltage (VCEO) | 500 V |
| Collector Current (IC) | 4 A |
| Power Dissipation (Ptot) | 40 W |
| Gain Bandwidth Product (fT) | 60 MHz |
| DC Current Gain (hFE) | 80 – 160 |
| Junction Temperature (TJ) | 150 ??C max. |
| Package Type | Transistor Die (bare silicon) |
| Collector-Base Voltage (VCBO) | 500 V |
JANKCBD2N5004-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior voltage and current handling capabilities compared to many standard discrete transistors, enabling enhanced power efficiency and thermal management. Its bare die format allows for custom packaging and integration, providing flexibility not available with pre-packaged transistors. The low saturation voltage and broad gain range contribute to improved switching accuracy and reduced conduction losses, making it a standout option for power electronics engineers.
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Typical Applications
- Power switching circuits in industrial motor drives, where efficient current control and thermal stability are critical for prolonged operation.
- Custom high-voltage amplifier stages requiring precise gain and low distortion.
- Embedded in multi-chip modules for power management in renewable energy inverters.
- Used in high-frequency switching power supplies for industrial automation systems.
JANKCBD2N5004-Transistor-Die Brand Info
The JANKCBD2N5004-Transistor-Die is a precision semiconductor product offered by IC Manufacturer, a reputed supplier specializing in advanced transistor dies and silicon components. This product line is engineered to meet stringent industrial standards, delivering consistent electrical performance and reliability. With a focus on high-voltage, high-current applications, this transistor die supports a broad spectrum of power electronics solutions worldwide.
FAQ
What is the maximum collector current rating of the JANKCBD2N5004-Transistor-Die?
The maximum collector current rating for this transistor die is 4 amperes, allowing it to handle moderate to high current loads in power switching and amplification applications without degradation.
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Can this transistor die be used in high-voltage applications?
Yes, the device supports a collector-emitter voltage of up to 500 volts, making it suitable for high-voltage industrial environments and power electronics setups.
What thermal limits should be observed when using this transistor die?
The maximum junction temperature is rated at 150 degrees Celsius. Proper heat dissipation techniques and thermal management are essential to maintain reliable operation within this limit.
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Does the transistor die come pre-packaged?
No, this product is supplied as a bare silicon die, allowing for flexible integration into custom packages or multi-chip modules tailored to specific application requirements.
What are the typical applications best suited for this transistor die?
This transistor die is well-suited for power switching circuits, industrial motor drives, high-voltage amplifiers, and embedded power modules in renewable energy systems, reflecting its robust electrical and thermal characteristics.
