JANKCBD2N2907A Transistor Die – PNP Bipolar Junction Transistor Chip, Bare Die Package

  • This transistor die controls current flow efficiently, enabling precise signal amplification in electronic circuits.
  • Its electrical characteristics ensure stable operation under varying voltage conditions, critical for consistent performance.
  • The compact die design allows integration into space-constrained devices, optimizing board layout without sacrificing functionality.
  • Ideal for use in switching applications where rapid response and reliability improve overall system efficiency.
  • Manufactured with stringent quality standards to enhance long-term durability and minimize failure rates in demanding environments.
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JANKCBD2N2907A-Transistor-Die Overview

The JANKCBD2N2907A-Transistor-Die is a high-performance PNP bipolar junction transistor (BJT) die designed for robust amplification and switching applications. Engineered to deliver reliable operation in discrete semiconductor solutions, this transistor die offers precise control of current flow with consistent gain characteristics. Its compact die format facilitates integration into custom packaging or hybrid circuits, making it ideal for industrial and electronic design engineers seeking efficient and dependable transistor dies. The device??s proven PNP architecture supports a wide array of electronic designs requiring stable performance under various electrical conditions. For more detailed semiconductor components, visit IC Manufacturer.

JANKCBD2N2907A-Transistor-Die Technical Specifications

Parameter Specification
Transistor Type PNP Bipolar Junction Transistor (BJT) Die
Maximum Collector-Emitter Voltage (VCEO) 60 V
Maximum Collector Current (IC) 600 mA
Power Dissipation (Ptot) 0.8 W (die level)
DC Current Gain (hFE) 100 to 300 (typical)
Transition Frequency (fT) 100 MHz (typical)
Junction Temperature (Tj) Maximum 150??C
Package Type Unpackaged Die for Custom Integration

JANKCBD2N2907A-Transistor-Die Key Features

  • High current gain: Ensures efficient signal amplification, reducing the need for additional gain stages in circuits.
  • Robust voltage rating: Supports up to 60 V collector-emitter voltage, suitable for moderate power applications.
  • Compact die format: Enables seamless integration into custom semiconductor packages and hybrid modules.
  • Wide transition frequency: Typical 100 MHz frequency response allows for high-speed switching and amplification tasks.

Typical Applications

  • General-purpose amplification in discrete circuit designs, including audio amplifiers and signal conditioning modules, where reliable PNP transistor operation is required.
  • Switching applications within industrial control systems, providing efficient load regulation and signal switching.
  • Integration in hybrid circuits for automotive electronics, where temperature endurance and stable gain are critical.
  • Custom semiconductor packaging solutions requiring bare dies for compact, precision electronic assemblies.

JANKCBD2N2907A-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers superior integration flexibility compared to packaged transistors, enabling engineers to design more compact, customized semiconductor modules. Its reliable gain performance and voltage tolerance provide enhanced sensitivity and stability under various operating conditions. Unlike many typical alternatives, this die supports high-frequency applications up to 100 MHz, making it a versatile choice for switching and amplification circuits that demand precision and robustness.

JANKCBD2N2907A-Transistor-Die Brand Info

The JANKCBD2N2907A-Transistor-Die is a semiconductor product from a reputable manufacturer known for producing discrete transistor dies and bare semiconductor components optimized for industrial and electronic design markets. The brand focuses on delivering high-quality transistor dies that enable flexible packaging solutions, supporting engineers in creating custom electronic assemblies. This product reflects the brand??s commitment to reliability, performance, and integration versatility in the semiconductor industry.

FAQ

What is the maximum collector current rating of this transistor die?

The maximum collector current rating for this PNP transistor die is 600 mA. This current rating defines the upper limit for continuous collector current during proper operation without risking damage to the device.

Can this transistor die handle high-frequency switching applications?

Yes, the transistor die has a typical transition frequency of 100 MHz, making it suitable for high-frequency switching and amplification applications where fast response times are necessary.

Is the transistor die suitable for use in high-temperature environments?

The device has a maximum junction temperature rating of 150??C, allowing it to operate reliably in moderately high-temperature conditions commonly found in industrial electronics and automotive circuits.

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What packaging options are available for the JANKCBD2N2907A transistor die?

This product is provided as an unpackaged semiconductor die, intended for custom packaging

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