JANKCBD2N2221A-Transistor-Die Overview
The JANKCBD2N2221A-Transistor-Die is a high-performance NPN bipolar junction transistor die designed for efficient signal amplification and switching applications. Offering robust electrical characteristics with a reliable gain bandwidth, this transistor die is optimized for integration in compact electronic circuits. Its precise current handling and voltage ratings make it suitable for a wide range of industrial and commercial uses. Engineers and sourcing specialists can rely on this die for consistent performance, ease of integration, and compatibility with standard fabrication processes. For more detailed information, visit IC Manufacturer.
JANKCBD2N2221A-Transistor-Die Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Type | NPN Bipolar Junction Transistor (BJT) | – |
| Collector-Emitter Voltage (Vce) | 40 | V |
| Collector Current (Ic) | 600 | mA |
| Power Dissipation (Pd) | 500 | mW |
| DC Current Gain (hFE) | 100 to 300 | – |
| Transition Frequency (fT) | 300 | MHz |
| Package Type | Die (Bare Transistor Die) | – |
| Operating Temperature Range | -55 to +150 | ??C |
JANKCBD2N2221A-Transistor-Die Key Features
- High Gain Bandwidth: Enables fast switching and amplification with transition frequencies up to 300 MHz, ideal for high-speed electronics.
- Robust Current Handling: Supports collector currents up to 600 mA, suitable for medium-power applications demanding reliable performance.
- Bare Die Format: Facilitates direct integration into custom semiconductor assemblies, reducing package-induced parasitics and improving thermal management.
- Wide Operating Temperature Range: Ensures device stability and durability in harsh industrial environments between -55??C and +150??C.
Typical Applications
- Signal amplification in low to medium power analog circuits, where precise current gain and frequency response are critical for performance.
- Switching applications in embedded systems requiring fast response times and efficient power control within compact PCB footprints.
- Custom semiconductor module assembly where bare die integration reduces size and improves thermal dissipation.
- Industrial instrumentation circuits that operate reliably under wide temperature variations and demanding environmental conditions.
JANKCBD2N2221A-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior integration flexibility compared to packaged counterparts, allowing engineers to optimize circuit density and thermal performance. Its high transition frequency and reliable current handling deliver enhanced switching speed and gain accuracy. The wide operating temperature range further ensures dependable functionality in demanding industrial applications, providing a clear advantage in efficiency and robustness over typical transistor devices.
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JANKCBD2N2221A-Transistor-Die Brand Info
The JANKCBD2N2221A transistor die is a product distributed under the JANKCBD series by specialized semiconductor manufacturers focused on providing high-quality bare die components for industrial applications. This device is a die-level version of the classic 2N2221 transistor, a well-known and widely used NPN transistor type recognized for its versatility and dependable performance. The brand reputation centers on delivering consistent manufacturing quality, tight electrical parameter control, and comprehensive technical support for advanced electronics design and sourcing professionals.
FAQ
What is the maximum collector current rating of this transistor die?
The maximum collector current rating for this transistor die is 600 mA, which supports medium-power applications and ensures reliable operation within specified limits.
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Can this transistor die operate in high-frequency circuits?
Yes, with a transition frequency of up to 300 MHz, this device is suitable for high-frequency signal amplification and switching, making







