JANKCB2N5004-Transistor-Die | High-Performance Amplifier Transistor Die | JANKCB Package

  • This transistor die controls electrical current flow, enabling efficient signal amplification and switching tasks.
  • The device features a voltage rating suitable for medium-power circuits, ensuring stable operation under typical conditions.
  • Its die form factor supports compact designs, reducing board space and improving thermal management.
  • Ideal for integration in power management modules, it enhances performance while maintaining circuit reliability.
  • Manufactured under strict quality protocols, the component offers consistent performance and durability in demanding environments.
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产品上方询盘

JANKCB2N5004-Transistor-Die Overview

The JANKCB2N5004-Transistor-Die is a precision semiconductor die designed for high-performance electronic switching and amplification applications. Engineered for robust operation, this transistor die offers reliable electrical characteristics suitable for integration into complex circuits requiring stable current gain and voltage handling. Its compact die form factor enables seamless embedding within multi-chip modules and custom assembly processes. The device is optimized for efficient thermal dissipation and consistent electrical performance, making it a versatile component within power management and signal conditioning systems. Sourced from a trusted IC Manufacturer, it provides engineers and sourcing specialists with a dependable solution for demanding industrial and consumer electronics.

JANKCB2N5004-Transistor-Die Key Features

  • High current gain: Enables improved signal amplification efficiency, reducing the need for additional amplification stages in circuit design.
  • Robust voltage rating: Ensures safe operation under elevated voltage conditions, enhancing device reliability in power-sensitive environments.
  • Compact die size: Facilitates integration into space-constrained systems and supports advanced packaging techniques for miniaturized electronics.
  • Thermal stability: Maintains consistent performance across a wide temperature range, reducing the risk of thermal-induced failure.

JANKCB2N5004-Transistor-Die Technical Specifications

ParameterSpecification
Collector-Emitter Voltage (VCEO)500 V
Collector Current (IC)2 A
Power Dissipation (PD)30 W
Current Gain (hFE)50 ?C 300
Transition Frequency (fT)100 MHz
Package TypeDie (bare silicon)
Operating Temperature Range-55??C to +150??C
Junction Temperature (TJ)175??C

JANKCB2N5004-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers superior voltage and current handling capabilities compared to typical discrete transistors, enabling higher power applications with enhanced reliability. The bare die format provides flexibility for custom packaging and integration, which is advantageous over pre-packaged devices. Its broad operating temperature and robust gain characteristics ensure stable performance in industrial environments, making it a preferred choice for engineers targeting durable and efficient semiconductor solutions.

Typical Applications

  • Power management circuits requiring efficient switching and amplification with high voltage endurance, such as DC-DC converters and motor drivers.
  • Industrial control systems demanding reliable transistor dies for signal conditioning and load driving.
  • Consumer electronics where compact transistor dies enable miniaturization of high-performance amplifiers and switching modules.
  • Embedded systems integrating multi-die modules for optimized power and signal management in harsh operating conditions.

JANKCB2N5004-Transistor-Die Brand Info

The JANKCB2N5004 transistor die is offered by a reputable semiconductor manufacturer known for delivering high-quality, industrial-grade electronic components. This product line emphasizes rigorous quality control and consistent manufacturing processes to meet stringent industry standards. The transistor die is designed to support advanced assembly techniques and provide reliable performance across diverse applications, reflecting the manufacturer??s commitment to innovation and customer satisfaction in the semiconductor market.

FAQ

What type of transistor is the JANKCB2N5004-Transistor-Die?

The device is a bipolar junction transistor (BJT) in bare die form, designed for high voltage and current applications. It is optimized for amplification and switching within industrial and consumer electronic circuits.

How does the die format benefit my design compared to packaged transistors?

A bare transistor die offers greater flexibility for custom packaging and integration into multi-chip modules or hybrid circuits. This allows for space savings and tailored thermal management strategies not possible with standard packaged devices.

What is the maximum collector current rating of the device?

The transistor die supports a continuous collector current of up to 2 amperes, making it suitable for moderate power applications requiring reliable current handling.

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产品中间询盘

What operating temperature range can this transistor die withstand?

The device is specified to operate reliably between -55??C and +150??C, accommodating a wide temperature range typical in industrial and harsh environment applications.

Can the JANKCB2N5004-Transistor-Die be used in high-frequency applications?

Yes, with a transition frequency of approximately 100 MHz, this transistor die can support moderate high-frequency switching and amplification tasks, suitable for various analog and digital circuit designs.

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