JANKCB2N4033-Transistor-Die High-Speed Switching Transistor in Die Package – JANKCB Brand

  • This transistor die controls current flow efficiently, enabling precise switching and amplification in circuits.
  • Its compact die size reduces board space, allowing for smaller and more integrated electronic designs.
  • The device supports stable operation under varying electrical loads, ensuring consistent performance in real-world conditions.
  • Ideal for signal processing in communication equipment, it enhances device responsiveness and signal integrity.
  • Manufactured to meet stringent quality standards, the component offers reliable long-term functionality in critical applications.
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产品上方询盘

JANKCB2N4033-Transistor-Die Overview

The JANKCB2N4033-Transistor-Die is a high-performance bipolar junction transistor die designed for efficient switching and amplification in industrial electronics. Engineered with precise semiconductor fabrication techniques, this transistor die offers reliable electrical characteristics suitable for integration into power management and signal processing circuits. Its robust construction ensures durability under demanding conditions, making it a preferred choice for engineers seeking dependable transistor dies. Available directly from IC Manufacturer, this product supports seamless customization and integration in various semiconductor applications.

JANKCB2N4033-Transistor-Die Key Features

  • High current gain: Provides improved amplification performance, enabling efficient signal boosting in analog and digital circuits.
  • Low saturation voltage: Minimizes power losses during switching, enhancing overall circuit efficiency and thermal management.
  • Robust die construction: Ensures reliable operation under high-stress environments, contributing to enhanced device longevity and stability.
  • Compatibility with standard packaging: Facilitates straightforward assembly and integration into diverse electronic modules and systems.

JANKCB2N4033-Transistor-Die Technical Specifications

ParameterSpecification
Collector-Emitter Voltage (Vce)40 V
Collector Current (Ic)3 A
Power Dissipation (Pd)30 W
Current Gain (hFE)100 – 320
Transition Frequency (fT)100 MHz
Package TypeDie (bare semiconductor)
Operating Temperature Range-55??C to +150??C
Base-Emitter Voltage (Vbe)0.7 V typical

JANKCB2N4033-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers superior current gain and low saturation voltage compared to standard transistor dies, resulting in enhanced switching efficiency and lower power consumption. Its bare die format allows for greater customization during assembly, providing flexibility not always available with packaged alternatives. Additionally, the robust thermal and electrical characteristics improve reliability, making it well suited for demanding industrial applications.

Typical Applications

  • Power amplification stages in industrial control systems, where precise gain and high current handling are critical for signal integrity and system performance.
  • Switching components in power supply circuits, benefiting from the low saturation voltage to improve energy efficiency.
  • Signal processing modules requiring reliable transistor dies capable of operating within wide temperature ranges.
  • Custom semiconductor assemblies in automotive electronics, leveraging the die??s ruggedness and electrical stability.

JANKCB2N4033-Transistor-Die Brand Info

The JANKCB2N4033-Transistor-Die is produced by a recognized semiconductor manufacturer known for precision-engineered transistor dies tailored to industrial applications. This product reflects the brand??s commitment to quality, reliability, and performance in semiconductor devices. It aligns with the company??s extensive portfolio of electronic components designed for integration into complex systems requiring consistent and verifiable transistor characteristics.

FAQ

What is the maximum collector current for this transistor die?

The maximum continuous collector current for this transistor die is rated at 3 amperes, ensuring it can handle moderate power switching and amplification tasks in industrial circuits without degradation.

Can this transistor die operate at high temperatures?

Yes, the device supports an operating temperature range from -55??C up to +150??C, making it suitable for use in environments with significant thermal variation and ensuring stable performance under stress.

Is the JANKCB2N4033 suitable for high-frequency applications?

With a transition frequency (fT) of approximately 100 MHz, this transistor die is capable of operation in moderate high-frequency circuits, such as RF amplification and switching in industrial electronics.

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产品中间询盘

How does the die format benefit electronic assembly?

The bare die format allows for direct integration into custom semiconductor packages or modules, offering flexibility in design and improved thermal management compared to pre-packaged transistors.

What typical applications is this transistor die designed for?

This transistor die is commonly used in power amplification, switching circuits, signal processing modules, and automotive electronics, where reliable performance and robust electrical characteristics are essential.

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