JANKCB2N3700 N-Channel MOSFET Transistor, 2N3700, TO-92 Package by JANKCB

  • This device performs efficient power conversion, enabling stable energy supply for various electronic systems.
  • It supports a high current rating, ensuring reliable operation under demanding load conditions.
  • The compact CBZ package minimizes board space, facilitating integration into size-constrained designs.
  • Ideal for industrial automation, it helps maintain consistent performance in complex control environments.
  • Manufactured with strict quality controls, it delivers dependable operation across diverse applications.
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JANKCB2N3700 Overview

The JANKCB2N3700 is a robust NPN bipolar junction transistor (BJT) designed for amplification and switching applications within industrial electronics. This device features reliable current gain and voltage ratings suitable for medium-power circuits. Engineered for consistent performance, it supports efficient signal processing and power control in diverse environments. Its compatibility with standard semiconductor assembly processes ensures seamless integration into various electronic systems. Ideal for engineers and sourcing specialists, the JANKCB2N3700 offers a balance of electrical characteristics tailored to meet demanding industrial requirements. For detailed specifications and purchasing options, visit the IC Manufacturer website.

JANKCB2N3700 Key Features

  • High Current Gain (hFE): Ensures effective signal amplification, improving signal integrity and system responsiveness.
  • Collector-Emitter Voltage (Vce): Rated to handle voltages up to 60 V, supporting a wide range of medium-power switching applications.
  • Collector Current (Ic): Maximum continuous current of 200 mA allows reliable operation in moderate load circuits.
  • Low Saturation Voltage: Reduces power loss during switching, enhancing overall energy efficiency and thermal performance.

JANKCB2N3700 Technical Specifications

Parameter Value Unit
Transistor Type NPN Bipolar Junction
Collector-Emitter Voltage (Vce) 60 V
Collector-Base Voltage (Vcb) 75 V
Emitter-Base Voltage (Veb) 5 V
Collector Current (Ic) 200 mA
Power Dissipation (Ptot) 310 mW
DC Current Gain (hFE) 100 – 300
Transition Frequency (fT) 100 MHz
Package Type TO-92

JANKCB2N3700 Advantages vs Typical Alternatives

This transistor offers a high current gain combined with a robust voltage rating that outperforms many typical BJTs in its class. Its low saturation voltage reduces power losses, increasing efficiency in switching circuits. The wide frequency response supports fast signal processing, while the TO-92 package ensures easy mounting and reliable thermal handling, making it a preferred choice over generic alternatives in both amplification and switching roles.

Typical Applications

  • Signal amplification in audio and low-frequency analog circuits, where stable gain and linearity are critical for sound quality and signal integrity.
  • Switching loads in industrial control systems requiring reliable operation under moderate current and voltage conditions.
  • Driver stages in relay and LED control circuits, providing efficient switching with minimal power dissipation.
  • General-purpose amplification and switching in consumer electronics and instrumentation, ensuring versatile performance across various devices.

JANKCB2N3700 Brand Info

The JANKCB2N3700 is manufactured by a reputable semiconductor producer specializing in discrete components tailored for industrial and commercial electronics. This device reflects the brand??s commitment to quality and performance, adhering to stringent manufacturing standards for consistency. Its design and production processes ensure high reliability and long operational life, making it suitable for demanding industrial environments.

FAQ

What type of transistor is the JANKCB2N3700?

The device is an NPN bipolar junction transistor designed for amplification and switching applications. It operates with standard BJT principles, offering reliable current gain and voltage handling suitable for medium-power circuits.

What are the maximum voltage ratings for this transistor?

The transistor supports a maximum collector-emitter voltage of 60 V, a collector-base voltage of 75 V, and an emitter-base voltage up to 5 V, making it suitable for many industrial and commercial electronic designs.

What is the maximum collector current allowed?

The maximum continuous collector current for this component is 200 mA, which ensures reliable operation in circuits requiring moderate current handling capabilities without compromising performance.

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How does the TO-92 package benefit the application?

The TO-92 package offers compact size and straightforward mounting for through-hole PCB assembly. It provides good thermal dissipation for the transistor??s power rating and simplifies handling during manufacturing and servicing.

Is the transistor suitable for high-frequency applications?

Yes, with a transition frequency of approximately 100 MHz, this transistor can perform well in moderately high-frequency circuits, enabling efficient signal amplification and switching in applications that demand fast response times.

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