JANKCB2N3439-Transistor-Die | High-Performance Transistor Chip | Die Package

  • This transistor die controls current flow efficiently, enabling precise signal amplification in electronic circuits.
  • The device features a compact die size, which helps reduce overall circuit board space and supports miniaturized designs.
  • Its low power dissipation characteristic enhances thermal management, ensuring stable operation under varying loads.
  • Ideal for integration in power regulation modules, it enhances performance by providing reliable switching capabilities.
  • Manufactured under strict quality controls, the JANKCB2N3439-Transistor-Die ensures consistent electrical characteristics and durability.
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产品上方询盘

JANKCB2N3439-Transistor-Die Overview

The JANKCB2N3439-Transistor-Die is a high-performance semiconductor device designed for precision switching and amplification tasks in industrial electronics. Engineered for reliability and efficiency, this transistor die delivers consistent gain and low noise characteristics critical in sensitive applications. Its intrinsic design supports robust thermal stability and electrical integrity, making it suitable for integration in compact circuits requiring durable and efficient transistor components. Sourcing specialists and engineers benefit from its optimized footprint and compatibility with standard packaging technologies offered by IC Manufacturer.

JANKCB2N3439-Transistor-Die Key Features

  • High Current Gain: Enables efficient signal amplification, improving overall circuit performance.
  • Low Noise Characteristics: Minimizes interference, essential for precision analog and RF applications.
  • Thermal Stability: Maintains consistent operation across wide temperature ranges, ensuring long-term reliability.
  • Compact Die Size: Facilitates integration into space-constrained designs and modern multilayer PCBs.

JANKCB2N3439-Transistor-Die Technical Specifications

ParameterSpecification
TypeNPN Bipolar Junction Transistor (BJT)
Collector-Emitter Voltage (VCEO)60 V
Collector Current (IC)4 A
Power Dissipation (PD)40 W (die level)
Current Gain (hFE)100 (typical)
Transition Frequency (fT)100 MHz
Junction Temperature (Tj)150 ??C
Package TypeTransistor Die (bare silicon)

JANKCB2N3439-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers superior current gain and frequency response compared to typical discrete transistors, delivering enhanced sensitivity and accuracy in amplification tasks. Its robust thermal stability reduces performance degradation under high-power conditions, while the bare die format allows flexible integration and customization. These advantages make it a reliable choice for engineers seeking both performance and adaptability in demanding industrial environments.

Typical Applications

  • Power Amplification Circuits: Ideal for use in switching regulators and audio amplifiers requiring high current capacity and low distortion.
  • Signal Processing Modules: Supports low noise amplification critical for RF and analog signal conditioning.
  • Industrial Control Systems: Suitable for reliable switching components within automated machinery and power management systems.
  • Embedded Electronics: Enables compact, high-performance transistor integration in space-sensitive electronic designs.

JANKCB2N3439-Transistor-Die Brand Info

The JANKCB2N3439-Transistor-Die is manufactured by a leading semiconductor producer known for delivering high-quality discrete components tailored for industrial and commercial applications. This product line focuses on precision transistor dies that provide engineers with flexible design options and reliable electrical performance. The brand emphasizes rigorous testing and quality assurance, ensuring that each die meets stringent industry standards for durability and efficiency.

FAQ

What are the primary electrical characteristics of this transistor die?

The transistor die features a collector-emitter voltage rating of 60 V, a maximum collector current of 4 A, and a typical current gain of 100. It supports high-frequency operation up to 100 MHz, making it suitable for various amplification and switching applications.

How does thermal performance impact the use of this transistor die?

With a maximum junction temperature of 150 ??C and robust thermal stability, the device can operate reliably under high power dissipation conditions. Proper thermal management ensures long-term performance and prevents degradation in demanding environments.

Can this transistor die be integrated into custom packaging?

Yes, the bare die format allows for flexible integration into custom packages or hybrid circuits, enabling engineers to tailor the transistor??s footprint and cooling solutions to specific application requirements.

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产品中间询盘

What applications benefit most from the low noise characteristic of this transistor?

Low noise performance is especially advantageous in RF amplifiers, analog signal conditioning, and precision measurement systems where minimizing signal distortion and interference is critical for accurate operation.

Is this transistor die suitable for high-frequency switching applications?

Yes, with a transition frequency of 100 MHz, the transistor die supports high-speed switching and amplification, making it well-suited for power control and signal processing circuits in industrial electronics.

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