JANKCB2N2906A JANKCB NPN Transistor Amplifier – TO-92 Package

  • This device performs high-efficiency power conversion, enabling stable voltage regulation for various electronic systems.
  • Featuring a robust current rating, it supports demanding loads while maintaining consistent performance under stress.
  • Its compact CBZ package reduces board space, facilitating integration into size-constrained designs.
  • Ideal for embedded controllers in industrial equipment, it enhances system reliability through precise power management.
  • Manufactured with rigorous quality controls, it ensures long-term operational stability and durability in diverse conditions.
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JANKCB2N2906A Overview

The JANKCB2N2906A is a high-performance PNP bipolar junction transistor (BJT) designed for reliable switching and amplification in industrial and consumer electronic circuits. Featuring a maximum collector current of 600mA and a collector-emitter voltage rating of 40V, it balances power handling with efficiency, making it suitable for moderate power applications. This transistor offers robust gain characteristics and stable operation across a wide temperature range, ensuring dependable performance in various environments. Available in a standard TO-18 package, it facilitates easy integration into existing designs. For detailed sourcing and additional technical support, visit IC Manufacturer.

JANKCB2N2906A Key Features

  • High Collector Current Capacity: Supports up to 600mA, allowing effective switching of moderate loads without performance degradation.
  • Voltage Handling: Collector-emitter voltage rating of 40V ensures compatibility with a wide range of low to medium voltage circuits.
  • Reliable Gain Performance: Current gain (hFE) ranges from 100 to 300, providing consistent amplification suitable for signal processing and driver stages.
  • Thermal Stability: Operating temperature range supports reliable operation from ?C65??C to +200??C, enhancing durability in harsh conditions.

JANKCB2N2906A Technical Specifications

ParameterSpecification
Transistor TypePNP Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO)40 V
Collector Current (IC)600 mA
Power Dissipation (Ptot)400 mW (maximum)
Current Gain (hFE)100 to 300 (at IC = 10mA)
Transition Frequency (fT)100 MHz (typical)
Package TypeTO-18 Metal Can
Operating Temperature Range?C65??C to +200??C

JANKCB2N2906A Advantages vs Typical Alternatives

This device offers a balanced combination of moderate voltage and current ratings with a wide operating temperature range, providing more thermal robustness than many standard BJTs. Its stable gain and low power dissipation make it advantageous in power-sensitive applications requiring reliable switching accuracy. The TO-18 package enhances heat dissipation compared to plastic encapsulated alternatives, improving long-term reliability in industrial environments.

Typical Applications

  • Signal amplification and switching in audio equipment, ensuring clear sound processing and control in consumer electronics.
  • Driver stages for relay circuits, enabling efficient control of electromechanical components.
  • Low to medium power voltage regulation circuits, providing consistent voltage reference and protection.
  • General-purpose switching in industrial control systems where moderate current handling and thermal resilience are required.

JANKCB2N2906A Brand Info

The JANKCB2N2906A is manufactured under the JANKC brand, known for producing reliable semiconductors tailored to industrial and consumer markets. This product reflects JANKC??s commitment to quality and robustness, offering engineers a trusted transistor solution for diverse electronic designs. The brand??s focus on consistent performance and comprehensive technical support ensures smooth integration into your projects.

FAQ

What is the maximum collector-emitter voltage rating for this transistor?

The maximum collector-emitter voltage (VCEO) is rated at 40 volts, which allows the transistor to be used safely in circuits with voltages up to this threshold without risk of breakdown.

What type of package does this transistor use, and why is it important?

This transistor comes in a TO-18 metal can package. This packaging provides improved thermal dissipation and mechanical robustness compared to plastic packages, making it suitable for use in environments with higher temperature demands.

What is the typical current gain range for this device?

The current gain (hFE) for this transistor typically ranges from 100 to 300 when measured with a collector current of 10mA, ensuring reliable amplification performance in various signal and switching applications.

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Can this transistor be used in high-temperature environments?

Yes, the device supports an operating temperature range from ?C65??C up to +200??C, making it suitable for industrial applications that require components to withstand extreme temperatures.

What are the common applications for this transistor in electronic circuits?

Common applications include signal amplification in audio circuits, relay driver stages, voltage regulation, and general-purpose switching tasks in industrial control systems due to its moderate power handling and stable gain characteristics.

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