JANKCB2N2222A-Transistor-Die NPN Bipolar Junction Transistor Bare Die Package

JANKCB2N2222A-Transistor-Die Overview

The JANKCB2N2222A-Transistor-Die is a high-performance NPN bipolar junction transistor die designed for switching and amplification applications in industrial and consumer electronics. This transistor die offers reliable gain characteristics with a robust voltage and current handling capability in a compact semiconductor form. Ideal for integration in custom IC assemblies or hybrid modules, it supports efficient signal processing and power management in demanding environments. The die design ensures stable operation under varying thermal conditions, making it a dependable choice for engineering teams seeking consistent performance. For more detailed semiconductor components, visit IC Manufacturer.

JANKCB2N2222A-Transistor-Die Technical Specifications

JANKCB2N2222A-Transistor-Die Key Features

• High current capacity: Supports up to 800 mA collector current, enabling robust switching and amplification in power-sensitive circuits.
• Wide voltage tolerance: Handles up to 40 V collector-emitter voltage, allowing use in various industrial and automotive applications.
• Fast transition frequency: 300 MHz fT ensures suitability for high-frequency analog signal processing and RF applications.
• Compact bare die form factor: Facilitates custom integration into hybrid circuits and compact modules, maximizing design flexibility.
• Stable gain characteristics: Maintains consistent DC current gain between 100 and 300 over temperature range, ensuring reliable amplification.
• Wide operating temperature range: From -55??C to +150??C, supports harsh environments and industrial-grade applications.

Typical Applications

• Signal amplification in low to medium power analog circuits, where reliable gain and thermal stability are essential.
• Switching applications in power control and relay driving circuits within industrial automation systems.
• Custom hybrid integrated circuits requiring discrete transistor dies for precise performance tuning.
• High-frequency oscillator and RF driver stages benefiting from the fast transition frequency and low capacitance.

JANKCB2N2222A-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers superior current handling and voltage tolerance compared to many generic transistor dies. Its high transition frequency combined with stable gain across temperature enhances circuit accuracy and responsiveness. The bare die format provides integration advantages for custom assemblies where space and thermal management are critical. These features collectively provide increased reliability and efficiency, making it a preferred choice over typical packaged transistors in advanced industrial electronics.

JANKCB2N2222A-Transistor-Die Brand Info

The JANKCB2N2222A transistor die is produced under rigorous quality standards by a leading semiconductor manufacturer specializing in discrete components and transistor dies. The product aligns with industry norms for NPN transistor dies, widely used in various electronic design applications. This brand is recognized for delivering robust silicon components that support high-performance electronics design, offering extensive technical support and supply chain reliability for B2B industrial customers. The transistor die is part of a well-established product line trusted for consistency and durability in demanding electronic environments.

FAQ

What is the maximum collector current rating of this transistor die?

The maximum collector current rating is 800 mA, allowing the transistor die to handle moderate power levels suitable for switching and amplification in industrial electronics.