JANKCAR2N3636-Transistor-Die Overview
The JANKCAR2N3636-Transistor-Die is a high-performance semiconductor device designed for robust switching and amplification in industrial electronics. This transistor die offers reliable electrical characteristics suitable for power management and signal control applications. Manufactured to precise specifications, it ensures consistent performance in demanding environments where thermal stability and electrical efficiency are critical. Engineers and sourcing specialists benefit from its compact form factor and compatibility with various assembly processes. For detailed manufacturing standards and related products, visit IC Manufacturer.
JANKCAR2N3636-Transistor-Die Key Features
- High voltage rating: Supports elevated voltage operations, enabling use in power regulation circuits with enhanced safety margins.
- Low saturation voltage: Minimizes power loss during conduction, improving overall system efficiency.
- Thermal stability: Designed to maintain performance under varying temperature conditions, ensuring reliability in harsh industrial environments.
- Compact die size: Facilitates integration into dense semiconductor packages, optimizing space in multi-component assemblies.
JANKCAR2N3636-Transistor-Die Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 60 | V |
| Collector Current (IC) | 5 | A |
| Power Dissipation (PD) | 50 | W |
| Gain Bandwidth Product (fT) | 40 | MHz |
| DC Current Gain (hFE) | 100-300 | ?? |
| Junction Temperature (Tj) | 150 | ??C |
| Saturation Voltage (VCE(sat)) | 1.2 | V |
| Package Type | Die (bare silicon) | ?? |
JANKCAR2N3636-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior voltage handling and current capacity compared to many standard alternatives, enabling higher power applications with improved efficiency. Its low saturation voltage reduces thermal losses, while the robust thermal limits enhance long-term reliability. The bare die format allows for more flexible integration into custom packages, supporting advanced assembly techniques and optimized thermal management.
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Typical Applications
- Power amplification in industrial motor control systems, where precise switching and thermal endurance are essential for operational stability and longevity.
- Switching regulators in power supply units requiring efficient high-current handling.
- Signal amplification in audio and communication devices that demand consistent gain and frequency response.
- Custom semiconductor module fabrication for automotive and industrial automation sectors.
JANKCAR2N3636-Transistor-Die Brand Info
The JANKCAR2N3636-Transistor-Die is a product offered by a leading semiconductor supplier specializing in discrete transistor dies for industrial electronics. This product reflects the brand??s commitment to delivering high-quality, precision-engineered silicon components that cater to demanding electrical and thermal requirements. The brand supports engineers and manufacturers with detailed datasheets, quality assurance, and supply chain reliability for seamless integration into complex electronic systems.
FAQ
What is the maximum collector current rating for this transistor die?
The maximum collector current rating is 5 amperes, which allows it to handle moderate power levels suitable for various industrial and power management applications without compromising reliability.
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Can this transistor die operate at high temperatures?
Yes, it is rated for a maximum junction temperature of 150??C, making it suitable for use in environments with elevated thermal stress commonly found in industrial settings.
What advantages does the bare die format provide?
The bare die format allows for flexible integration into custom packages and modules, facilitating optimized thermal management and enabling compact assembly in complex electronic systems.
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Is this transistor suitable for high-frequency applications?
With a gain bandwidth product of 40 MHz, this transistor die can be used effectively in moderate-frequency amplification and switching circuits, though it is primarily optimized for power and control functions.
What is the significance of the low saturation voltage in this transistor?
Low saturation voltage reduces power dissipation during conduction, improving overall efficiency and thermal performance, which is critical for power-sensitive and high-current applications.
