JANKCAR2N3634-Transistor-Die Overview
The JANKCAR2N3634-Transistor-Die is a high-performance semiconductor component designed for use in power amplification and switching applications. Its planar die construction ensures efficient heat dissipation and reliable operation under demanding electrical conditions. This transistor die is engineered to deliver robust current handling and voltage endurance, making it suitable for industrial electronics and power management circuits. Sourced from a trusted IC Manufacturer, it supports engineers and sourcing specialists requiring precision and durability in transistor die solutions.
JANKCAR2N3634-Transistor-Die Key Features
- High current capacity: Supports substantial collector current, enabling effective power switching and amplification.
- Voltage tolerance: Withstands elevated collector-emitter voltages, ensuring reliability in high-voltage circuits.
- Low saturation voltage: Enhances efficiency by reducing power loss during conduction phases.
- Planar die design: Improves thermal management and integration into power modules.
JANKCAR2N3634-Transistor-Die Technical Specifications
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (Vce) | 100 V |
| Collector Current (Ic) | 20 A |
| Power Dissipation (Pd) | 150 W |
| Transition Frequency (fT) | 3 MHz |
| Gain Bandwidth Product | 3 MHz |
| Package Type | Transistor Die (bare die) |
| Operating Temperature Range | -65??C to +200??C |
| Base-Emitter Voltage (Vbe) | 1.2 V (typical) |
JANKCAR2N3634-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior current handling and voltage tolerance compared to typical discrete transistors in similar power classes. Its low saturation voltage reduces conduction losses, enhancing overall circuit efficiency. The planar die structure provides improved thermal stability and facilitates integration in compact power modules. These features combine to deliver enhanced reliability and performance in demanding industrial applications.
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Typical Applications
- Power amplification circuits in industrial control systems where reliable high-current switching is required.
- Motor control drivers needing robust transistor dies with stable thermal characteristics.
- Switching power supplies that benefit from efficient, high-voltage transistor components.
- General-purpose power management in communications and automotive electronics.
JANKCAR2N3634-Transistor-Die Brand Info
The JANKCAR2N3634-Transistor-Die is produced by a well-established semiconductor manufacturer known for delivering reliable transistor dies tailored to industrial and power electronics markets. This product exemplifies the brand??s commitment to quality, offering precise fabrication and material integrity to meet rigorous performance standards required by engineers and sourcing professionals worldwide.
FAQ
What type of transistor is the JANKCAR2N3634-Transistor-Die?
The device is a bipolar junction transistor (BJT) implemented as a bare die, designed primarily for power amplification and switching tasks in industrial applications requiring high current and voltage tolerance.
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Can this transistor die be used in high-temperature environments?
Yes, the transistor die supports an operating temperature range from -65??C to +200??C, making it suitable for demanding industrial environments where thermal stability is critical.
What is the maximum collector current rating for this transistor die?
The maximum continuous collector current rating is 20 amperes, which allows it to handle substantial power loads in switching and amplifier circuits.
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How does the planar die design benefit performance?
The planar die structure improves heat dissipation and mechanical stability, reducing thermal resistance and enabling more efficient integration into power modules and assemblies.
Is this transistor die compatible with standard packaging and mounting processes?
Being a bare transistor die, it requires specialized packaging and mounting techniques typical for discrete die components, allowing custom integration into power semiconductors and hybrid circuits.
