JANKCAR2N2369A-Transistor-Die Overview
The JANKCAR2N2369A transistor die is a high-performance bipolar junction transistor (BJT) designed for switching and amplification in industrial electronics. This transistor die offers reliable electrical characteristics with a robust gain bandwidth product and optimized current handling capabilities. Suitable for integration into custom semiconductor packages, it provides engineers and sourcing specialists with a flexible component for precision analog and digital circuit designs. Manufactured by a recognized IC Manufacturer, this transistor die supports applications demanding stable operation, efficiency, and ease of integration in compact and high-frequency environments.
JANKCAR2N2369A-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (V_CEO) | 40 V |
| Collector Current (I_C) | 0.8 A |
| Power Dissipation (P_D) | 0.8 W (die level) |
| Gain Bandwidth Product (f_T) | 100 MHz (typical) |
| DC Current Gain (h_FE) | 100 ?C 300 (typical) |
| Transition Frequency | Up to 100 MHz |
| Junction Temperature (T_J) | -55??C to +150??C |
| Package Type | Transistor Die (bare die for integration) |
JANKCAR2N2369A-Transistor-Die Key Features
- High-frequency operation: Supports up to 100 MHz transition frequency, enabling effective amplification in RF and high-speed switching circuits.
- Robust current handling: Collector current rating of 0.8 A ensures dependable performance in moderate power applications.
- Wide operating temperature range: Maintains stability from -55??C to +150??C, suitable for harsh industrial environments.
- Bare die format: Allows flexible packaging and integration options, enabling custom semiconductor assembly and advanced circuit design.
Typical Applications
- Signal amplification in analog circuits, including audio and RF stages, where precise gain and frequency response are critical.
- Switching elements in power control circuits requiring efficient on/off operation under moderate load conditions.
- Custom semiconductor modules for industrial equipment needing tailored transistor integration.
- General-purpose transistor replacement in discrete and hybrid circuit designs demanding a balance of speed and power handling.
JANKCAR2N2369A-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers a combination of high transition frequency and moderate power capacity that outperforms many generic BJTs in industrial applications. Its bare die format provides superior integration flexibility compared to packaged transistors. Additionally, its wide temperature tolerance and consistent gain make it a reliable choice for precision switching and amplification, ensuring efficiency and durability in demanding environments.
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JANKCAR2N2369A-Transistor-Die Brand Info
The JANKCAR2N2369A is a semiconductor device produced under the JANKCAR brand, known for delivering reliable discrete components widely used in industrial electronics. JANKCAR specializes in producing transistor dies and related semiconductor products optimized for high-frequency and power-efficient applications. Their transistors are trusted for quality manufacturing standards and are commonly selected by engineers for custom packaging and embedded system designs.
FAQ
What is the maximum collector current rating for this transistor die?
The maximum collector current rating is 0.8 A, which allows the transistor to handle moderate power loads efficiently in industrial and analog circuit applications.
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Can this transistor die operate reliably in high-temperature environments?
Yes, the transistor die is specified to operate within a junction temperature range of -55??C to +150??C, making it suitable for harsh and high-temperature environments common in industrial settings.
What frequency range is supported by this transistor die?
This device offers a gain bandwidth product and transition frequency up to approximately 100 MHz,
