JANKCAP2N3636-Transistor-Die by JANKCAP2N ?C High-Performance Amplifier Transistor Die

  • This transistor die enables precise current amplification, improving circuit control and efficiency in electronic designs.
  • Operates reliably within specified voltage and current limits, ensuring stable performance under typical load conditions.
  • Its compact die form factor supports space-saving layouts, ideal for high-density printed circuit boards.
  • Suitable for signal amplification in communication devices, enhancing signal integrity and overall system responsiveness.
  • Manufactured with consistent quality standards, providing dependable operation and long-term durability in applications.
Microchip Technology-logo
产品上方询盘

JANKCAP2N3636-Transistor-Die Overview

The JANKCAP2N3636-Transistor-Die is a high-performance bipolar transistor die designed for robust amplification and switching applications. Engineered with precise semiconductor fabrication techniques, this transistor die offers reliable electrical characteristics suitable for integration into custom semiconductor devices or power modules. Its compact die form factor supports efficient thermal management and optimal electrical connectivity, making it ideal for demanding industrial electronics environments. Sourcing specialists and engineers rely on this component for consistency and compatibility across a range of circuit designs. For more detailed product sourcing and technical support, visit IC Manufacturer.

JANKCAP2N3636-Transistor-Die Key Features

  • High current handling capability: Enables efficient power amplification without significant thermal degradation.
  • Low saturation voltage: Reduces power losses during switching, improving overall circuit efficiency.
  • Robust die construction: Enhances long-term reliability and operational stability in harsh industrial environments.
  • Compact semiconductor die size: Facilitates easy integration into multi-chip modules or customized assemblies.

JANKCAP2N3636-Transistor-Die Technical Specifications

ParameterSpecification
Collector-Emitter Voltage (Vce)60 V
Collector Current (Ic)15 A
Power Dissipation (Pd)150 W
Gain Bandwidth Product (fT)3 MHz
Transition Frequency3 MHz
Package TypeDie (bare semiconductor)
Operating Temperature Range-55??C to +150??C
Base-Emitter Voltage (Vbe)1.2 V typical
Collector-Base Breakdown Voltage (BVCBO)80 V

JANKCAP2N3636-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers superior power handling and low voltage saturation compared to typical discrete transistors. Its bare die format allows for customized packaging, improving thermal dissipation and integration flexibility. Additionally, its reliable electrical characteristics make it a dependable choice for industrial-grade applications requiring high current and voltage performance. These benefits translate into enhanced efficiency and longer operational lifespan under challenging conditions.

Typical Applications

  • Power amplification circuits in industrial control systems, where high current and voltage handling are critical for efficient operation and durability.
  • Switching regulators and power converters requiring fast response and low losses.
  • Custom semiconductor modules for automotive electronics demanding reliable transistor performance in harsh environments.
  • General-purpose amplification in audio and signal processing equipment with emphasis on thermal management and robustness.

JANKCAP2N3636-Transistor-Die Brand Info

The JANKCAP2N3636-Transistor-Die is a precision-engineered component from a leading semiconductor manufacturer specializing in power transistor technologies. This product reflects the brand??s commitment to delivering high-quality, reliable transistor dies suitable for industrial and commercial applications. The brand??s expertise in semiconductor fabrication ensures that each die meets stringent electrical and mechanical specifications, providing engineers and sourcing professionals with confidence in performance and supply consistency.

FAQ

What is the maximum collector current for the JANKCAP2N3636-Transistor-Die?

The maximum collector current rating for this transistor die is 15 amperes. This rating ensures that the device can handle substantial current loads typical in power amplification and switching applications without compromising performance or reliability.

Can the transistor die operate at high temperatures?

Yes, the transistor die is specified to operate reliably within a temperature range from -55??C to +150??C. This wide operating range makes it suitable for use in environments with significant temperature fluctuations and industrial conditions.

What are the typical applications for this transistor die?

Typical applications include power amplification in industrial control systems, switching regulators, custom semiconductor modules in automotive electronics, and general-purpose amplification tasks. Its design supports high current and voltage requirements in demanding electronic circuits.

📩 Contact Us

产品中间询盘

Is the JANKCAP2N3636 available in packaged form?

No, this product is supplied as a bare transistor die. This allows for flexible integration into custom packages or multi-chip modules, depending on the end-user??s design requirements and manufacturing capabilities.

How does this transistor die improve energy efficiency in circuits?

By featuring a low saturation voltage and high current handling capability, the transistor die reduces power losses during switching and amplification. This contributes to improved overall circuit efficiency and helps in minimizing heat generation within electronic systems.

Application

, ,

Save cost and time

Fast global delivery

Original parts guaranteed

Expert after-sale support

Looking for a Better Price?