JANKCAP2N3635-Transistor-Die | High-Performance Switching Transistor | Die Package

  • This transistor die enables efficient signal amplification, improving circuit performance in electronic devices.
  • Featuring a compact package, it saves valuable board space for denser circuit designs.
  • Its electrical characteristics support stable operation under varying load conditions, ensuring consistent output.
  • Ideal for use in power management circuits, it enhances energy control and system responsiveness.
  • Manufactured with high-quality processes, the JANKCAP2N3635-Transistor-Die offers reliable long-term durability.
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产品上方询盘

JANKCAP2N3635-Transistor-Die Overview

The JANKCAP2N3635-Transistor-Die is a high-performance semiconductor die designed for robust switching and amplification applications. Engineered to meet stringent industrial requirements, this transistor die offers reliable electrical characteristics suitable for power management and signal control circuits. Its compact die format allows for efficient integration into custom packaging and hybrid modules, facilitating both prototype development and volume manufacturing. Sourced from a trusted IC Manufacturer, this transistor die supports designers and engineers aiming for precise control in demanding electronic environments.

JANKCAP2N3635-Transistor-Die Key Features

  • High voltage handling capability: Supports up to 400 V, enabling use in high-voltage switching applications with enhanced safety margins.
  • Significant current rating: Handles collector current up to 10 A, ensuring suitability for moderate power amplification and load driving.
  • Low saturation voltage: Minimizes power loss and thermal stress during operation, improving overall circuit efficiency.
  • Robust breakdown voltage: Provides reliable operation under transient and surge conditions, enhancing device longevity.

JANKCAP2N3635-Transistor-Die Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCEO)400V
Collector Current (IC)10A
Power Dissipation (Ptot)115W
Gain Bandwidth Product (fT)30MHz
Saturation Voltage (VCE(sat))1.8V
Transition Frequency30MHz
Junction Temperature (Tj)150??C
Storage Temperature Range-65 to +150??C

JANKCAP2N3635-Transistor-Die Advantages vs Typical Alternatives

This transistor die provides superior voltage and current handling compared to typical alternatives, ensuring reliable operation in demanding industrial circuits. Its low saturation voltage reduces power loss and heat generation, contributing to longer device life and efficiency. The die format enables flexible integration into custom assemblies, offering engineers enhanced design adaptability and improved thermal management capabilities.

Typical Applications

  • Power switching circuits requiring efficient high-voltage control and moderate current handling, such as motor drivers and power converters.
  • Signal amplification stages in industrial control systems, where reliable gain and bandwidth are critical.
  • Hybrid module integration for customized electronic assemblies demanding compact, robust transistor components.
  • Prototyping and development of power management solutions in harsh environments with elevated temperature requirements.

JANKCAP2N3635-Transistor-Die Brand Info

The JANKCAP2N3635-Transistor-Die is a precision-engineered product from a reputable semiconductor manufacturer known for delivering high-quality transistor dies tailored to industrial electronics. This product line reflects the manufacturer??s commitment to reliability, performance, and consistency, supporting engineering teams with components that meet rigorous standards for power electronics and signal processing applications.

FAQ

What is the maximum collector current rating for the JANKCAP2N3635 transistor die?

The maximum collector current for this transistor die is rated at 10 amperes, allowing it to handle moderate power loads typical in industrial switching and amplification circuits.

Can the transistor die operate at high voltages safely?

Yes, it supports collector-emitter voltages up to 400 volts, providing a wide safety margin suitable for high-voltage power applications.

What is the typical power dissipation capability of this transistor die?

The device can dissipate up to 115 watts under appropriate thermal management conditions, which aids in efficient handling of power in demanding environments.

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产品中间询盘

Is this transistor die suitable for integration into custom hybrid modules?

Absolutely. The bare die format is ideal for integration into custom packaging and hybrid modules, enabling tailored solutions for specialized industrial electronics.

What temperature range can this transistor die withstand?

The storage temperature range is from -65??C to +150??C, and the maximum junction temperature is 150??C, ensuring reliable operation in a variety of thermal conditions.

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