JANKCAP2N2369A-Transistor-Die Overview
The JANKCAP2N2369A transistor die is a high-performance bipolar junction transistor (BJT) designed for low noise and high gain applications in analog and RF circuits. It features a silicon planar epitaxial construction that ensures reliable switching and amplification with excellent linearity. This transistor die is optimized for applications requiring fast switching speeds and stable operation under varying temperature conditions. Sourced from a reputable IC Manufacturer, the device is well-suited for integration into custom semiconductor assemblies where precision and efficiency are critical.
JANKCAP2N2369A-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 40 V |
| Collector-Base Voltage (VCBO) | 60 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 0.5 A (max) |
| Power Dissipation (PD) | 0.8 W (max) |
| DC Current Gain (hFE) | 100 to 300 |
| Transition Frequency (fT) | 100 MHz (typical) |
| Package Type | Transistor Die (bare silicon chip) |
JANKCAP2N2369A-Transistor-Die Key Features
- High-frequency response: Supports applications requiring up to 100 MHz transition frequency, enabling efficient RF amplification and signal processing.
- Low noise characteristics: Minimal intrinsic noise ensures clearer signal amplification, which is essential for sensitive analog and communication circuits.
- Robust voltage ratings: Capable of handling collector-emitter voltages up to 40 V, providing flexibility for diverse circuit designs.
- Wide DC current gain range: Offers a gain of 100 to 300, allowing precise control of amplification levels in linear and switching operations.
- Bare die format: Enables direct integration into custom semiconductor modules or hybrid circuits, improving thermal management and reducing parasitic inductances.
Typical Applications
- RF amplifiers and oscillators where low noise and high gain are critical for signal fidelity and amplification efficiency.
- Analog switching circuits requiring fast response times and stable operation under moderate power dissipation.
- Custom hybrid integrated circuits where the bare die format allows for optimized thermal and electrical design.
- Small-signal amplification in communication devices, enabling improved signal-to-noise ratio and linearity.
JANKCAP2N2369A-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior high-frequency performance and low noise compared to typical discrete transistors, making it ideal for precision analog and RF circuits. Its bare die format provides enhanced integration capabilities and thermal efficiency over packaged devices. With robust voltage and current ratings combined with a broad gain range, it delivers reliable, consistent amplification and switching performance, outperforming many conventional transistor options in demanding industrial applications.
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JANKCAP2N2369A-Transistor-Die Brand Info
The JANKCAP2N2369A transistor die is manufactured by a leading semiconductor producer specializing in discrete components and integrated circuits. The brand is recognized for its commitment to quality and innovation in silicon transistor technology, serving industrial and communications markets globally. This product reflects the company??s expertise in delivering reliable, high-performance transistor solutions tailored for professional engineering and manufacturing environments.
FAQ
What type of transistor is the JANKCAP2N2369A die?
It is an NPN bipolar junction transistor (BJT) designed as a bare silicon die. This format allows for direct integration into custom semiconductor assemblies, providing flexibility for specialized
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