JANKCAM2N3636-Transistor-Die Overview
The JANKCAM2N3636-Transistor-Die is a high-performance semiconductor component designed for precise control of high voltage and current in industrial electronics. This transistor die offers robust switching capabilities with optimized thermal management, enabling reliable operation in demanding environments. Its compact form factor supports integration into custom power modules and discrete component assemblies. The device is engineered to meet stringent quality standards for consistent electrical characteristics, making it suitable for power amplification, switching regulators, and motor control applications. For engineers and sourcing specialists seeking dependable transistor dies, the JANKCAM2N3636 delivers a balance of efficiency and durability. Learn more at IC Manufacturer.
JANKCAM2N3636-Transistor-Die Key Features
- High breakdown voltage: Enables the transistor die to operate safely under elevated voltage conditions, enhancing circuit protection and reliability.
- Low saturation voltage: Minimizes power loss during conduction, improving overall system efficiency and thermal performance.
- Compact die size: Facilitates integration into tight spaces and custom semiconductor packages, aiding miniaturization of power electronics.
- Optimized thermal resistance: Supports effective heat dissipation to maintain stable operation and extend device lifespan in high-power applications.
JANKCAM2N3636-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Collector-Emitter Voltage (VCEO) | 600 V |
| Collector Current (IC) | 30 A |
| Power Dissipation (Ptot) | 125 W |
| Gain Bandwidth Product (fT) | 3 MHz |
| Saturation Voltage (VCE(sat)) | 2.0 V @ IC=30 A |
| Thermal Resistance, Junction to Case (R??JC) | 0.5 ??C/W |
| Junction Temperature (TJ) | 150 ??C max |
| Die Dimensions | 3.6 mm ?? 3.6 mm |
JANKCAM2N3636-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior voltage handling and current capacity compared to typical alternatives, resulting in enhanced power efficiency and robustness. Its low saturation voltage reduces conduction losses, while the optimized thermal characteristics ensure reliable performance under high stress. These advantages contribute to longer device life and lower thermal management costs in industrial power electronics applications.
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Typical Applications
- Power switching circuits in industrial motor drives, where high voltage and current handling are critical for efficient operation and durability.
- DC-DC converters requiring reliable high-frequency switching with minimal power loss.
- Power amplifiers in communication and control systems that demand consistent gain and thermal stability.
- Custom semiconductor modules integrating discrete transistor dies for compact, high-performance power management solutions.
JANKCAM2N3636-Transistor-Die Brand Info
The JANKCAM2N3636-Transistor-Die is manufactured by a leading semiconductor supplier known for precision-engineered power devices. This product reflects the brand??s commitment to quality, reliability, and performance in the industrial electronics sector. Designed to meet rigorous manufacturing standards, it supports diverse applications requiring stable switching and high power handling capability. The brand??s extensive experience ensures consistent delivery of transistor dies optimized for integration, thermal management, and electrical performance.
FAQ
What is the maximum collector current rating of this transistor die?
The maximum collector current rating is 30 amperes, allowing the transistor die to handle substantial current loads in power switching and amplification applications without compromising reliability.
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How does the thermal resistance affect device performance?
The thermal resistance junction-to-case of 0.5 ??C/W indicates efficient heat dissipation, which helps maintain the junction temperature within safe limits, thus enhancing long-term reliability and preventing thermal runaway.
Can this transistor die be used in high-frequency switching circuits?
Yes, with a gain bandwidth product of 3 MHz, this transistor die is suitable for moderate high-frequency switching applications such as DC-DC converters, providing a balance between speed and power handling.
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What are the physical dimensions of the transistor die?
The die measures 3.6 mm by 3.6 mm, making it compatible with compact semiconductor packages and enabling integration into space-constrained industrial electronic assemblies.
Is the JANKCAM2N3636-Transistor-Die suitable for harsh industrial environments?
Yes, the device??s design supports operation up to 150 ??C junction temperature and includes features for thermal stability and robustness, making it appropriate for demanding industrial environments requiring reliable power control.
