JANKCAM2N3634-Transistor-Die High-Speed Switching Transistor in Die Package

  • This transistor die amplifies electrical signals, enabling precise control in electronic circuits.
  • A maximum voltage rating ensures safe operation within specified limits, protecting connected components.
  • The compact package type offers board-space savings, facilitating integration into dense circuit designs.
  • Ideal for switching applications, it enhances efficiency in power management and signal modulation tasks.
  • Manufactured under controlled conditions to maintain consistency and long-term operational reliability.
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产品上方询盘

JANKCAM2N3634-Transistor-Die Overview

The JANKCAM2N3634 transistor die is a high-performance semiconductor component designed for precision switching and amplification in industrial and electronic applications. This transistor die offers reliable electrical characteristics, optimized for integration into custom circuits requiring robust gain and stable operation. Its die-level format allows for flexible packaging and direct mounting, making it suitable for advanced assembly processes. Engineers and sourcing specialists value this transistor die for its consistent performance and compatibility with a range of power management and signal processing uses. For detailed specifications and sourcing, visit IC Manufacturer.

JANKCAM2N3634-Transistor-Die Key Features

  • High current capacity: Supports substantial collector current enabling efficient power handling in switching applications.
  • Low saturation voltage: Minimizes power loss and heat generation, enhancing overall circuit efficiency.
  • Robust gain characteristics: Provides stable current amplification ensuring signal integrity in amplification circuits.
  • Die-level construction: Enables custom packaging options and direct integration into multi-chip modules or hybrid circuits.

JANKCAM2N3634-Transistor-Die Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (V_CEO)60V
Collector Current (I_C)10A
Power Dissipation (P_TOT)80W
DC Current Gain (h_FE)40?C160??
Transition Frequency (f_T)25MHz
Collector-Base Voltage (V_CBO)80V
Emitter-Base Voltage (V_EBO)5V
Operating Junction Temperature (T_J)150??C

JANKCAM2N3634-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers a balanced combination of high current capacity and low saturation voltage, making it advantageous over typical alternatives where power efficiency and thermal management are critical. Its wide gain range ensures consistent amplification, improving circuit accuracy. The die-level format enhances integration flexibility compared to packaged transistors, supporting advanced circuit miniaturization and reliability in industrial applications.

Typical Applications

  • Power amplification and switching in industrial motor control circuits, where reliable current handling and efficiency are essential.
  • Signal amplification in audio and radio frequency equipment requiring stable gain and low distortion.
  • Custom semiconductor modules incorporating discrete transistor dies for specialized power management solutions.
  • Hybrid integrated circuits where die-level components allow for compact and high-performance design layouts.

JANKCAM2N3634-Transistor-Die Brand Info

The JANKCAM2N3634 transistor die is a product from a reputable semiconductor supplier specializing in high-quality discrete components for industrial and electronic applications. This die is engineered to meet rigorous performance standards and offers design engineers a dependable solution for power switching and amplification. The brand emphasizes consistent manufacturing processes and detailed datasheet documentation to support engineering integration and procurement decisions.

FAQ

What is the maximum collector current rating of this transistor die?

The transistor die supports a maximum collector current of 10 amperes, allowing it to handle substantial currents suitable for power switching and amplification tasks in various electronic circuits.

Can this transistor die be used in high-frequency applications?

Yes, with a transition frequency of 25 MHz, this transistor die is capable of operating effectively in moderately high-frequency applications such as RF amplification and signal processing within its specified limits.

What are the thermal limitations for this device?

The maximum operating junction temperature is rated at 150??C, which defines the thermal boundary for reliable operation. Adequate heat dissipation measures should be employed to maintain device longevity and performance.

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产品中间询盘

Is the die format suitable for custom packaging?

Yes, the transistor die format allows for flexible packaging options, enabling engineers to integrate the device directly into multi-chip modules or custom hybrid circuits, facilitating compact and specialized designs.

How does the gain range affect performance?

The DC current gain ranges from 40 to 160, providing stable and predictable amplification. This gain range supports a variety of circuit designs by ensuring consistent signal amplification and reducing distortion.

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