JANKCAL2N3636-Transistor-Die Overview
The JANKCAL2N3636-Transistor-Die is a high-performance semiconductor component designed for robust power amplification and switching applications. Featuring reliable current handling and stable gain characteristics, this transistor die enables efficient integration into compact electronic circuits. Its precise electrical parameters support consistent operation under varying load conditions, making it a preferred choice for industrial and automotive electronics. Manufactured with advanced semiconductor processes, the device ensures low noise and high thermal stability. For sourcing and detailed technical support, visit IC Manufacturer.
JANKCAL2N3636-Transistor-Die Key Features
- High Current Capacity: Supports significant collector current, enabling powerful switching and amplification in demanding applications.
- Stable Gain Performance: Ensures consistent hFE values across operating conditions, critical for predictable circuit behavior.
- Thermal Reliability: Designed to maintain performance under elevated junction temperatures, enhancing device longevity and system stability.
- Compact Die Size: Facilitates integration into compact module designs, reducing overall system footprint without sacrificing performance.
JANKCAL2N3636-Transistor-Die Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (Vce) | 60 | V |
| Collector Current (Ic) | 30 | A |
| Power Dissipation (Pd) | 115 | W |
| DC Current Gain (hFE) | 20?C70 | ?? |
| Transition Frequency (fT) | 20 | MHz |
| Junction Temperature (Tj max) | 200 | ??C |
| Emitter-Base Voltage (Veb) | 5 | V |
| Storage Temperature Range | -65 to 150 | ??C |
JANKCAL2N3636-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior current handling and thermal stability compared to typical alternatives, ensuring reliable operation in power-intensive environments. Its consistent gain and voltage ratings provide engineers with predictable performance, reducing design complexity. The compact die format enables efficient integration, making it an advantageous choice for applications requiring high power density and robust switching capabilities.
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Typical Applications
- Power amplification in audio and RF circuits where reliable high current and voltage handling are essential for performance and signal integrity.
- Industrial motor control systems requiring durable transistors to manage variable load conditions and thermal stress.
- Automotive electronic modules demanding high thermal reliability and compact semiconductor components for harsh environments.
- Switching regulators and power converters where efficient switching and thermal management are critical for energy efficiency and system longevity.
JANKCAL2N3636-Transistor-Die Brand Info
The JANKCAL2N3636-Transistor-Die is produced by a trusted semiconductor manufacturer recognized for quality power transistors and discrete components. This product line focuses on delivering high-reliability semiconductor dies tailored for industrial-grade applications. The manufacturing process emphasizes precision doping and material quality to ensure consistent electrical characteristics and durability. This transistor die benefits from extensive validation and quality control, aligning with industry standards to meet demanding engineering requirements.
FAQ
What are the maximum voltage ratings for this transistor die?
The transistor die supports a maximum collector-emitter voltage of 60V and an emitter-base voltage up to 5V. These ratings define the limits for safe operation under the device??s specified electrical conditions.
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How does the device perform under high-temperature conditions?
Designed to operate reliably at junction temperatures up to 200??C, this transistor die maintains stable electrical characteristics under thermal stress, which is critical for applications with elevated temperature environments.
What is the typical current gain range for this transistor die?
The DC current gain (hFE) ranges from 20 to 70, providing predictable amplification performance suited for power switching and signal amplification tasks in industrial electronics.
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Is the die suitable for high-frequency applications?
With a transition frequency (fT) of 20 MHz, this transistor die can support moderate frequency applications, including certain RF amplification and switching circuits that do not require ultra-high-frequency operation.
What are the storage temperature limits for this component?
The device can be safely stored within a temperature range of -65??C to 150??C, ensuring durability during transportation and storage prior to assembly or deployment in electronic systems.
