JANKCAL2N3635-Transistor-Die Overview
The JANKCAL2N3635 transistor die is a high-performance semiconductor component designed for power amplification and switching applications. Engineered for robust operation, it offers a reliable solution with precise electrical characteristics suitable for industrial-grade electronic assemblies. This transistor die supports efficient current handling and thermal stability, making it ideal for integration into custom power modules and discrete component designs. Sourced from a reputable IC Manufacturer, it delivers consistent performance that aligns with demanding engineering requirements in complex electronic systems.
JANKCAL2N3635-Transistor-Die Key Features
- High voltage rating: Enables operation in circuits requiring strong voltage endurance, enhancing application versatility.
- Significant current capacity: Supports substantial load currents, ensuring reliable power switching and amplification.
- Low saturation voltage: Minimizes power loss and heat generation, improving overall energy efficiency in designs.
- Compact die size: Facilitates integration into compact assemblies and custom packages without compromising performance.
JANKCAL2N3635-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Collector-Emitter Voltage (VCEO) | 60 V |
| Collector Current (IC) | 5 A |
| Power Dissipation (PD) | 40 W |
| Current Gain (hFE) | 40 – 160 (typical) |
| Transition Frequency (fT) | 30 MHz |
| Base-Emitter Voltage (VBE) | 1.2 V (typical) |
| Package Type | Die (bare silicon chip) |
| Operating Temperature Range | -55 ??C to +150 ??C |
JANKCAL2N3635-Transistor-Die Advantages vs Typical Alternatives
This transistor die stands out due to its combination of robust voltage and current ratings alongside a compact form factor. Compared to typical discrete transistors, it offers improved thermal performance and lower saturation voltage, which translates to enhanced efficiency and reliability. Its bare die format allows for flexible integration into specialized power modules or custom packages, providing engineers with greater design freedom and optimized space utilization.
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Typical Applications
- Power amplification circuits in industrial control systems, where reliable high-current switching is critical for automation and motor control.
- Custom power module assemblies requiring compact and efficient transistor dies for optimized thermal management.
- Switching regulators and DC-DC converters demanding efficient power handling and minimal losses.
- High-frequency amplification circuits operating up to 30 MHz, suitable for signal processing needs.
JANKCAL2N3635-Transistor-Die Brand Info
The JANKCAL2N3635 transistor die is produced by a recognized semiconductor manufacturer known for quality and reliability in discrete power components. This product is part of their portfolio aimed at serving industrial electronics markets requiring durable and efficient transistor dies. Designed to meet stringent performance standards, it benefits from advanced fabrication processes ensuring consistency and robustness in demanding applications.
FAQ
What is the maximum collector current rating of this transistor die?
The maximum collector current rating is 5 amperes, allowing the transistor to handle substantial load currents suitable for power switching and amplification tasks.
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Can this transistor die operate at high temperatures?
Yes, it supports an operating temperature range from -55 ??C up to +150 ??C, making it suitable for harsh industrial environments and ensuring reliable performance under thermal stress.
What is the typical current gain (hFE) range for this transistor die?
The current gain typically ranges between 40 and 160, providing flexibility in amplification applications and enabling designers to optimize biasing conditions accordingly.
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Is the transistor die supplied in a packaged format?
No, this is a bare die product, meaning it is supplied without packaging. This allows integration into custom modules or packages tailored to specific application requirements.
What are the main benefits of using a die over a packaged transistor?
Using a bare die offers advantages such as reduced parasitic inductance and capacitance, improved thermal conductivity when mounted properly, and the ability for designers to create bespoke packages, optimizing size and performance for specific industrial applications.
