JANKCAF2N2484-Transistor-Die High-Performance Switching Transistor Die Package

  • This transistor die enables precise current control, improving circuit efficiency and signal amplification.
  • The device??s high voltage rating supports robust performance in demanding electronic environments.
  • Its compact die size facilitates integration into small form factor designs, saving valuable board space.
  • Ideal for use in power management modules, it helps maintain stable operation under varying load conditions.
  • Manufactured under strict quality protocols, it ensures consistent reliability and long operational life.
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产品上方询盘

JANKCAF2N2484-Transistor-Die Overview

The JANKCAF2N2484-Transistor-Die is a high-performance semiconductor component designed for advanced electronic circuits requiring reliable switching and amplification functions. Engineered with precision doping and optimized die architecture, this transistor die supports efficient current control with enhanced thermal stability. Its compact footprint and consistent electrical characteristics make it ideal for integration into power management modules and signal processing applications. Manufactured under rigorous quality controls, the device ensures long-term operational stability, catering to demanding industrial environments. For detailed technical support and sourcing options, visit the IC Manufacturer website.

JANKCAF2N2484-Transistor-Die Key Features

  • High current gain: Enables efficient amplification, reducing power loss and improving circuit performance.
  • Low saturation voltage: Minimizes energy dissipation during switching, enhancing overall system efficiency.
  • Robust thermal tolerance: Supports stable operation at elevated temperatures, increasing device reliability in harsh environments.
  • Compact die size: Facilitates integration into multi-chip modules and space-constrained designs without compromising performance.

JANKCAF2N2484-Transistor-Die Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCEO)60V
Collector Current (IC)4A
DC Current Gain (hFE)100?C320?C
Power Dissipation (Ptot)30W
Transition Frequency (fT)100MHz
Base-Emitter Voltage (VBE)1.2V
Junction Temperature (Tj)150??C
Package TypeDie (unpackaged)?C

JANKCAF2N2484-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers superior thermal stability and a high current gain compared to standard discrete transistors, ensuring better efficiency and longer service life. Its low saturation voltage reduces power dissipation, which is critical in high-frequency switching applications. The compact die format allows for flexible integration in custom semiconductor assemblies, giving it a distinct advantage in space-constrained industrial systems.

Typical Applications

  • Power amplification in industrial control circuits, providing reliable switching and signal integrity in demanding environments.
  • High-frequency signal processing, where fast transition frequency and low voltage drop are essential.
  • Battery management systems for efficient current regulation and thermal management.
  • Embedded modules in automotive electronics requiring robust transistor performance under varying thermal conditions.

JANKCAF2N2484-Transistor-Die Brand Info

The JANKCAF2N2484-Transistor-Die is a specialized semiconductor product offered by a leading IC manufacturer known for stringent quality standards and innovative die-level solutions. This product line is engineered to meet rigorous industrial specifications, delivering consistent electrical performance and durability. Designed to support the growing demands of power management and signal amplification, the transistor die exemplifies the manufacturer??s commitment to advanced semiconductor process technology and reliability.

FAQ

What is the maximum collector-emitter voltage rating of this transistor die?

The maximum collector-emitter voltage rating is 60 volts, which defines the highest voltage the device can reliably withstand without breakdown under normal operating conditions.

Can this transistor die handle high current loads?

Yes, it supports a continuous collector current of up to 4 amperes, making it suitable for applications requiring moderate to high current switching or amplification.

What operating temperature range is supported by this transistor die?

The device can operate up to a junction temperature of 150??C, ensuring stable performance in environments with elevated thermal stress.

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产品中间询盘

Is this transistor die suitable for high-frequency applications?

With a transition frequency of 100 MHz, it is well-suited for high-frequency signal processing tasks and switching applications requiring fast response times.

What packaging format does this transistor come in?

This product is supplied as a bare die, allowing for customized packaging and integration into multi-chip modules or hybrid circuits tailored to specific design requirements.

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