JANKCAF2N2369A-Transistor-Die Overview
The JANKCAF2N2369A transistor die is a high-performance semiconductor component designed for efficient signal amplification and switching applications. This transistor die offers precise electrical characteristics suitable for integration into custom IC packages or hybrid circuits. With optimized gain and low saturation voltage, it enables enhanced linearity and switching speed, critical in analog and digital electronic designs. Its die form factor supports flexible assembly options, making it an ideal choice for engineers focusing on compact, reliable transistor solutions. For more detailed product insights and sourcing, visit IC Manufacturer.
JANKCAF2N2369A-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor (BJT) Die |
| Collector-Emitter Voltage (VCEO) | 60 V (typical) |
| Collector Current (IC) | 0.8 A (maximum) |
| Power Dissipation (PD) | 1.25 W (die level) |
| Transition Frequency (fT) | 100 MHz (typical) |
| DC Current Gain (hFE) | 100 to 300 (at IC=10mA) |
| Package Type | Unpackaged Die (bare silicon) |
| Operating Temperature Range | -55??C to +150??C |
| Base-Emitter Voltage (VBE) | 0.7 V (typical) |
JANKCAF2N2369A-Transistor-Die Key Features
- High current handling capability: Supports up to 0.8 A collector current, enabling robust performance in power-sensitive applications.
- Wide voltage tolerance: Collector-emitter voltage rating up to 60 V ensures reliable operation in moderate voltage environments.
- High transition frequency: The 100 MHz transition frequency allows for effective use in high-speed switching circuits and RF amplification.
- Bare die format: Facilitates custom packaging and integration flexibility for specialized industrial and aerospace electronics.
- Stable gain characteristics: Provides consistent DC current gain between 100 and 300, ensuring predictable amplification behavior.
- Extended temperature range: Operates reliably from -55??C to +150??C, suitable for harsh environmental conditions.
Typical Applications
- Signal amplification in RF and analog circuits where compact and high-frequency transistor dies are required for custom assembly.
- Switching components in industrial control systems demanding reliable operation under varying temperature conditions.
- Power management circuits in automotive electronics that require compact transistor dies with robust current handling.
- Discrete transistor integration in hybrid modules for aerospace and military-grade electronic systems.
JANKCAF2N2369A-Transistor-Die Advantages vs Typical Alternatives
This transistor die provides superior integration flexibility compared to packaged transistors, enabling tailored assembly designs. Its high transition frequency and wide voltage tolerance offer enhanced switching speed and voltage robustness. The bare die format reduces parasitic losses common in traditional packages, improving efficiency and thermal performance. Additionally, its extended temperature range ensures reliable operation where other transistors might fail, making it a preferred choice for demanding industrial and aerospace applications.
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JANKCAF2N2369A-Transistor-Die Brand Info
The JANKCAF2N2369A transistor die is produced by a reputable semiconductor manufacturer known for high-quality bipolar transistor components. This product leverages decades of expertise in silicon transistor fabrication, providing industry-standard performance in die form. The brand emphasizes reliability, precision, and flexibility, catering to engineers and sourcing specialists requiring components for custom electronic assemblies. The manufacturer supports global industrial and commercial markets with comprehensive datasheets, testing, and supply chain assurance, ensuring consistent product availability and technical support.
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