JANKCAD2N3636-Transistor-Die High-Performance Amplifier Transistor Die Package

  • This transistor die enables efficient current amplification, improving signal control in electronic circuits.
  • Its specified voltage rating ensures safe operation within designed electrical limits, preventing device failure.
  • The compact die size allows for space-saving integration on densely populated circuit boards.
  • Ideal for use in switching applications where precise control enhances overall system performance.
  • Manufactured under stringent quality standards, the device offers consistent reliability in demanding environments.
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产品上方询盘

JANKCAD2N3636-Transistor-Die Overview

The JANKCAD2N3636-Transistor-Die is a precision-engineered semiconductor component designed for high-performance switching and amplification applications. As a bare transistor die, it allows for direct integration into custom assemblies, offering flexibility in packaging and thermal management. Manufactured with stringent quality controls, this transistor die provides reliable electrical characteristics and stable operation under varied conditions. Ideal for engineers and sourcing specialists seeking a compact and efficient transistor solution, it delivers consistent performance suitable for industrial and electronic system designs. For detailed specifications and sourcing, visit IC Manufacturer.

JANKCAD2N3636-Transistor-Die Key Features

  • High current handling capability: Supports continuous collector current, enabling robust power management in demanding circuits.
  • Low saturation voltage: Minimizes power loss and heat generation, enhancing overall energy efficiency in switching applications.
  • Compact die format: Facilitates direct integration into custom packages or modules, providing design flexibility and improved thermal dissipation.
  • Reliable gain characteristics: Ensures consistent amplification performance across temperature ranges critical for industrial electronics.

JANKCAD2N3636-Transistor-Die Technical Specifications

ParameterSpecification
Collector-Emitter Voltage (VCEO)60 V
Collector Current (IC)10 A (Continuous)
Power Dissipation (Ptot)80 W (Die limited)
DC Current Gain (hFE)40 ?C 160 (varies by test conditions)
Transition Frequency (fT)?? 100 MHz
Junction Temperature (TJ)Max 150 ??C
Emitter-Base Voltage (VEBO)5 V
Package TypeBare Die (for custom packaging)

JANKCAD2N3636-Transistor-Die Advantages vs Typical Alternatives

This transistor die stands out with its high current capacity and low voltage saturation, offering superior power efficiency compared to typical packaged transistors. Its bare die format enables enhanced thermal management and integration flexibility that standard encapsulated devices cannot match. This translates to improved reliability and higher performance in compact industrial applications where space and heat dissipation are critical factors.

Typical Applications

  • Power amplifiers in industrial control systems, where reliable switching and amplification at high currents are essential for stable operation.
  • Custom semiconductor module assembly requiring bare die integration for optimized thermal performance.
  • High-frequency switching regulators benefiting from the transistor??s fast transition frequency and low saturation voltage.
  • Automotive electronics where compact, high-current transistors are used for efficient power management and control.

JANKCAD2N3636-Transistor-Die Brand Info

The JANKCAD2N3636 transistor die is part of a high-quality line of semiconductor components produced by JANKCAD, a recognized brand in the industrial electronics sector. Known for precision manufacturing and rigorous testing standards, JANKCAD provides reliable transistor dies that meet strict performance and quality criteria. This product reflects the brand??s commitment to delivering components that support advanced electronic designs and demanding industrial applications.

FAQ

What is the maximum collector current rating for this transistor die?

The transistor die supports a continuous collector current of up to 10 amperes, making it suitable for high-power switching and amplification tasks in industrial electronics.

Can the bare die be used directly in electronic circuits?

As a bare transistor die, it requires appropriate packaging or mounting on a substrate for protection and electrical connections before use in practical circuits.

What is the typical current gain range of this device?

The DC current gain ranges from 40 to 160 depending on operating conditions, providing flexibility in designing amplification stages with predictable performance.

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How does the transistor die handle thermal dissipation?

Due to its bare die format, thermal management depends on the assembly and packaging method. This allows engineers to design optimized heat sinking solutions to maintain device reliability.

Is this transistor suitable for high-frequency applications?

Yes, with a transition frequency of at least 100 MHz, the transistor die is capable of supporting high-frequency switching and amplification in various industrial electronics systems.

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