JANKCAD2N3634-Transistor-Die Overview
The JANKCAD2N3634-Transistor-Die is a high-performance semiconductor component engineered for precise amplification and switching applications. Designed with robust electrical characteristics, this transistor die delivers reliable operation under varying thermal and electrical stresses. Its compact die form factor enables seamless integration into custom module assemblies, benefiting engineers and sourcing specialists who require a durable and efficient transistor solution. The device??s well-defined parameter set ensures predictable performance in industrial and electronic system designs. For further details and sourcing options, visit IC Manufacturer.
JANKCAD2N3634-Transistor-Die Key Features
- High current handling capacity: Supports collector currents up to 30 A, enabling robust power management in demanding circuits.
- Low saturation voltage: Enhances switching efficiency by minimizing power loss during transistor conduction phases.
- Thermal stability: The die structure maintains consistent performance across a wide temperature range, improving reliability in harsh environments.
- Compact die size: Facilitates integration into custom semiconductor packages and modules, optimizing space and thermal management.
JANKCAD2N3634-Transistor-Die Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (V_CE) | 80 | V |
| Collector Current (I_C) | 30 | A |
| Power Dissipation (P_D) | 115 | W |
| DC Current Gain (h_FE) | 40 – 160 | ?? |
| Saturation Voltage (V_CE(sat)) | 1.8 | V |
| Transition Frequency (f_T) | 4 | MHz |
| Junction Temperature (T_j) | 150 | ??C |
| Base-Emitter Voltage (V_BE) | 1.2 | V |
JANKCAD2N3634-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior current handling and thermal performance compared to typical alternatives, providing enhanced power efficiency and reliability. Its low saturation voltage reduces conduction losses, which benefits high-power switching applications. The compact die design enables flexible integration into specialized semiconductor packages, making it an excellent choice for engineers seeking dependable transistor dies with consistent electrical characteristics.
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Typical Applications
- Power amplification stages in industrial electronic systems where high current and voltage handling are required for efficient signal processing and control.
- Switching regulators and power converters demanding low saturation voltage to improve overall energy efficiency.
- Motor control circuits that benefit from the transistor??s robust current capacity and thermal stability.
- Custom semiconductor modules where compact transistor dies are integrated for optimized space and thermal management.
JANKCAD2N3634-Transistor-Die Brand Info
The JANKCAD2N3634-Transistor-Die is manufactured under stringent quality controls ensuring consistency and durability. Designed specifically for industrial and power electronics markets, this transistor die reflects a commitment to high reliability and performance. The product aligns with industry standards for die-level semiconductor components, providing engineers and sourcing specialists with a trusted solution for power switching and amplification needs.
FAQ
What is the maximum collector current for this transistor die?
The maximum collector current supported by this transistor die is 30 amperes. This high current capacity makes it suitable for demanding power applications where significant current flow is required without compromising device integrity.
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How does the saturation voltage affect overall device efficiency?
The transistor??s low saturation voltage of 1.8 volts reduces power dissipation during conduction, which enhances efficiency in switching applications. Lower saturation voltage means less energy lost as heat, improving overall system performance and thermal management.
What temperature range can this transistor die operate within?
The device is rated for a maximum junction temperature of 150??C, allowing it to maintain stable operation in elevated temperature environments typical in industrial and power electronics applications.
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Is this transistor die suitable for custom package integration?
Yes, the compact die size and well-defined electrical characteristics make it ideal for integration into custom semiconductor packages and modules, enabling flexible design options for electronics manufacturers.
What are the key electrical parameters to consider when designing with this transistor die?
Important parameters include the collector-emitter voltage (80 V), collector current (30 A), power dissipation (115 W), and DC current gain (40-160). These define the safe operating limits and performance capabilities for reliable circuit design.
