JANKCAD2N2369A-Transistor-Die Overview
The JANKCAD2N2369A-Transistor-Die is a high-performance bipolar junction transistor die designed for low-noise, high-frequency amplification in industrial and communication applications. It offers robust electrical characteristics including a high transition frequency and stable gain, making it suitable for RF signal processing and switching circuits. With its compact die form factor, this transistor die facilitates effective integration into custom semiconductor packages, enabling engineers to optimize device performance in specialized applications. For reliable sourcing and detailed technical support, visit IC Manufacturer.
JANKCAD2N2369A-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor Die |
| Collector-Emitter Voltage (VCEO) | 40 V |
| Collector-Base Voltage (VCBO) | 60 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 0.6 A (max) |
| Transition Frequency (fT) | 100 MHz (typical) |
| DC Current Gain (hFE) | 100?C300 |
| Power Dissipation (PD) | 400 mW (max) |
| Operating Temperature Range | -65??C to +200??C |
JANKCAD2N2369A-Transistor-Die Key Features
- High transition frequency: Enables effective amplification of RF signals up to 100 MHz, critical for communication and signal processing circuits.
- Robust voltage ratings: Supports collector-emitter voltages up to 40 V, providing safe operation in diverse industrial environments.
- Wide operating temperature range: Ensures reliable performance from -65??C to +200??C, suitable for harsh conditions and extended lifetime applications.
- Compact die form factor: Facilitates customization and integration into specialized semiconductor packages, allowing engineers flexibility in circuit design.
Typical Applications
- RF amplifier stages in communication devices requiring low noise and high gain for improved signal quality and transmission range.
- Switching circuits in industrial control systems where reliable transistor performance under variable voltage and temperature is essential.
- General-purpose amplification in analog signal processing, including audio and instrumentation systems.
- Custom semiconductor module development where transistor dies are assembled into tailored packages for specialized electronic devices.
JANKCAD2N2369A-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior frequency response and stable gain compared to typical discrete transistors, enabling higher precision in RF amplification. Its robust voltage and current ratings combined with a wide temperature operating range provide enhanced reliability in demanding industrial applications. The bare die format allows for flexible integration into custom packages, offering designers a tailored solution that outperforms standard packaged transistors in space-constrained or specialized electronic assemblies.
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JANKCAD2N2369A-Transistor-Die Brand Info
The JANKCAD2N2369A-Transistor-Die corresponds to a well-established transistor die type widely manufactured and supplied within the semiconductor industry. This transistor die is commonly associated with legacy bipolar junction transistor designs utilized in RF and general amplification applications. As a foundational building block in custom semiconductor packaging, it reflects the reliability and performance standards upheld by leading IC manufacturers focused on discrete semiconductor components, ensuring consistent quality for industrial and communications engineering projects.
FAQ
What is the typical use case for the JANKCAD2N2369A transistor die?
This transistor die is typically used in RF amplification circuits where low noise and high gain are essential. It is also well-suited for switching and general-purpose amplification in industrial control and communication devices, particularly where integration into custom packages is required.
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