JANKCA2N5237-Transistor-Die by JANKCA2N ?C High-Speed Switching Transistor Die Package

  • This transistor die controls electrical current flow, enabling efficient signal amplification or switching in circuits.
  • Its maximum voltage rating ensures stable operation under demanding electrical conditions, preventing device failure.
  • The compact package reduces board space requirements, facilitating integration into densely packed electronic assemblies.
  • Ideal for power management modules where precise current regulation improves overall device performance and longevity.
  • Manufactured under strict quality standards, the component offers consistent performance and long-term reliability.
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产品上方询盘

JANKCA2N5237-Transistor-Die Overview

The JANKCA2N5237-Transistor-Die is a high-performance semiconductor component designed for precise amplification and switching applications. This transistor die delivers robust electrical characteristics, optimized for integration into custom IC packages or hybrid circuits. Engineered with reliability and efficiency in mind, it supports stable operation across a range of industrial and commercial electronics. Its compact die format allows for flexible assembly options and enhanced thermal management. Sourced directly from a trusted IC Manufacturer, this transistor die is ideal for engineers and sourcing specialists seeking a dependable and versatile semiconductor building block.

JANKCA2N5237-Transistor-Die Key Features

  • High current gain: Ensures efficient amplification for signal integrity in various circuit designs.
  • Low noise operation: Critical for applications requiring minimal signal distortion and high sensitivity.
  • Robust thermal performance: Enables reliable operation under elevated temperature conditions, improving device longevity.
  • Compact die size: Facilitates integration into custom packages and hybrid modules, enhancing design flexibility.
  • Stable switching characteristics: Provides consistent performance in high-frequency switching applications.

JANKCA2N5237-Transistor-Die Technical Specifications

ParameterSpecification
TypeNPN Bipolar Junction Transistor (BJT) Die
Collector-Emitter Voltage (VCEO)40 V
Collector Current (IC)600 mA
Power Dissipation (PD)1.0 W (die level)
DC Current Gain (hFE)100 – 300
Transition Frequency (fT)100 MHz (typical)
Package TypeBare Die
Operating Temperature Range-55??C to +150??C
Noise FigureLow Noise Characteristics

JANKCA2N5237-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers a superior balance of current gain and switching speed compared to typical discrete transistors, enabling higher efficiency in amplification and digital switching circuits. Its bare die format allows closer integration within hybrid and custom IC packages, reducing parasitic effects and improving thermal dissipation. The device??s robust voltage and current ratings provide enhanced reliability and long-term stability in industrial electronics, making it preferable for precision applications over bulkier or less optimized alternatives.

Typical Applications

  • Signal amplification circuits in analog and mixed-signal ICs, where high gain and low noise are essential for maintaining signal integrity over varying frequencies.
  • Switching elements in power management modules, supporting efficient control of current flow in compact electronic designs.
  • Integration within hybrid circuits for industrial automation equipment, benefiting from the die??s thermal stability and size advantages.
  • Custom semiconductor solutions in telecommunications, utilizing its fast switching characteristics for signal processing tasks.

JANKCA2N5237-Transistor-Die Brand Info

The JANKCA2N5237-Transistor-Die represents a high-quality semiconductor component from a leading IC Manufacturer known for precision-engineered transistor dies. This product is designed to meet rigorous industrial standards, providing engineers and sourcing specialists with a reliable, consistent solution for integration into advanced electronic assemblies. Its manufacturing process ensures tight parameter control and excellent reproducibility, supporting diverse applications in industrial, communications, and consumer electronics sectors.

FAQ

What are the primary electrical characteristics of this transistor die?

The transistor die features a collector-emitter voltage rating of 40 V and supports collector currents up to 600 mA. It has a DC current gain range from 100 to 300 and a transition frequency around 100 MHz, making it suitable for high-frequency amplification and switching tasks.

Can this transistor die be used in high-temperature environments?

Yes, the device is rated for operation between -55??C and +150??C, offering reliable performance in demanding environmental conditions typical of industrial electronics and automotive applications.

What benefits does the bare die format provide?

The bare die format allows for flexible integration into custom packages or hybrid circuits, minimizing parasitic inductances and capacitances. This results in improved performance and thermal management compared to fully packaged transistors.

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产品中间询盘

Is this transistor suitable for low-noise applications?

Indeed, the JANKCA2N5237 transistor die is designed with low noise characteristics, making it well-suited for sensitive amplification stages where signal fidelity is critical.

How does this transistor die compare with typical discrete transistors?

Compared to typical discrete transistors, this die offers enhanced current gain and faster switching capabilities. Its compact, bare die form factor also allows for closer integration and better thermal dissipation, improving overall circuit efficiency and reliability.

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