JANKCA2N4150-Transistor-Die High-Speed Switching Transistor Die by JANKCA2N4150

  • This transistor die controls current flow, enabling efficient signal amplification and switching in circuits.
  • Its compact die size supports integration into space-constrained electronics, improving overall device design.
  • The JANKCA2N4150-Transistor-Die is suited for power management applications, enhancing thermal performance under load.
  • Ideal for use in custom semiconductor assemblies where precise electrical characteristics are critical for circuit stability.
  • Manufactured under strict quality standards, ensuring consistent performance and long-term reliability in varied conditions.
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产品上方询盘

JANKCA2N4150-Transistor-Die Overview

The JANKCA2N4150-Transistor-Die is a high-performance semiconductor component designed for efficient amplification and switching applications. This transistor die offers precise electrical characteristics and robust operational capabilities, making it suitable for integration into complex electronic circuits. Its compact die format supports advanced packaging and customization, providing engineers flexibility in design. The device delivers reliable performance under varying thermal conditions, ensuring stability in demanding industrial environments. For detailed sourcing and technical support, visit IC Manufacturer.

JANKCA2N4150-Transistor-Die Key Features

  • High Current Handling: Supports collector currents up to 8A, enabling robust power management in high-load circuits.
  • Elevated Voltage Ratings: The transistor withstands collector-emitter voltages up to 150V, critical for high-voltage industrial applications.
  • Optimized Gain Performance: Forward current gain (hFE) ranging from 40 to 320 offers flexibility in amplification tasks.
  • Thermal Stability: Operating junction temperature up to 150??C ensures dependable function under thermal stress.

JANKCA2N4150-Transistor-Die Technical Specifications

ParameterSpecification
Collector-Emitter Voltage (Vce)150 V
Collector Current (Ic)8 A
Power Dissipation (Pc)30 W (at 25??C)
Gain Bandwidth Product (fT)30 MHz
DC Current Gain (hFE)40 to 320
Operating Temperature Range-55??C to +150??C
Collector-Base Voltage (Vcb)150 V
Emitter-Base Voltage (Veb)5 V

JANKCA2N4150-Transistor-Die Advantages vs Typical Alternatives

This transistor die provides superior voltage and current handling compared to standard dies, ensuring enhanced reliability in power-intensive applications. Its broad gain range allows precise control over amplification, and the robust thermal tolerance supports long-term operation under harsh industrial conditions. The combination of these features makes it a preferred choice for engineers seeking performance and durability in semiconductor dies.

Typical Applications

  • Power amplification stages in industrial control systems, where high current and voltage ratings ensure reliable signal boosting under demanding conditions.
  • Switching elements in power supplies, enabling efficient load management and protection.
  • Motor driver circuits requiring robust transistor dies for handling transient loads and varying operational temperatures.
  • Signal processing modules in communication equipment, benefiting from the device??s stable gain and frequency response.

JANKCA2N4150-Transistor-Die Brand Info

The JANKCA2N4150-Transistor-Die is produced by a reputable semiconductor manufacturer known for delivering reliable, high-quality transistor dies tailored for industrial and commercial electronic applications. This product line exemplifies the brand??s commitment to precision engineering and stringent quality control, ensuring consistent performance in demanding environments. The transistor die supports advanced packaging and integration solutions favored by electronics design and manufacturing professionals.

FAQ

What are the maximum voltage ratings for this transistor die?

The transistor die supports a maximum collector-emitter voltage of 150V and a collector-base voltage of 150V. The emitter-base voltage rating is 5V. These ratings ensure reliable operation in circuits requiring high-voltage tolerance.

What is the typical range of current gain (hFE) for this device?

The DC current gain (hFE) ranges from 40 to 320, providing ample flexibility for amplification needs in various circuit configurations. This range allows engineers to optimize gain based on application requirements.

Can this transistor die operate at high temperatures?

Yes, it is rated for an operating junction temperature range from -55??C up to +150??C. This wide thermal range makes it suitable for industrial environments where temperature fluctuations are common.

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产品中间询盘

What power dissipation can this transistor die handle?

The device can dissipate up to 30 watts at a reference temperature of 25??C. Proper heat sinking and thermal management are recommended to maintain optimal performance and longevity.

Is this transistor die suitable for switching applications?

Absolutely. With its high collector current capacity and voltage ratings, the transistor die is well-suited for switching operations in power supplies, motor drivers, and other industrial switching circuits.

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