JANKCA2N3810-Dual-Transistor-Die Overview
The JANKCA2N3810-Dual-Transistor-Die is a high-performance dual transistor die designed for compact and efficient semiconductor applications. Featuring two matched NPN transistors on a single silicon die, it delivers reliable switching and amplification capabilities with consistent electrical characteristics. This product from IC Manufacturer is ideal for integration in analog circuits, signal processing, and driver stages requiring precise transistor matching. Its die form factor supports custom packaging and integration into hybrid modules, making it suitable for engineers seeking high-density and cost-effective transistor solutions.
JANKCA2N3810-Dual-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor (BJT) |
| Number of Transistors | 2 (Dual Transistor Die) |
| Collector-Emitter Voltage (VCEO) | 40 V |
| Collector Current (IC) | 200 mA (max per transistor) |
| Current Gain (hFE) | 50 to 300 (typical) |
| Transition Frequency (fT) | 100 MHz (typical) |
| Package Type | Die form (bare silicon die) |
| Operating Temperature Range | -55??C to +150??C |
| Base-Emitter Voltage (VBE) | 0.6 to 0.7 V |
| Collector-Base Voltage (VCBO) | 60 V |
JANKCA2N3810-Dual-Transistor-Die Key Features
- Matched Dual Transistors: Provides tight parameter matching on a single die, ensuring consistent gain and switching behavior, which benefits precision analog circuits and differential amplifier designs.
- High Transition Frequency: Supports operation up to 100 MHz, making it suitable for high-speed switching and RF applications where signal integrity is critical.
- Wide Operating Temperature Range: Ensures reliable performance in harsh industrial environments from -55??C to +150??C, enhancing device robustness and longevity.
- Bare Die Form Factor: Enables flexible integration into custom hybrid modules or specialized packaging, offering design engineers adaptability for space-constrained or optimized thermal dissipation designs.
Typical Applications
- Analog signal amplification circuits where matched transistor pairs improve linearity and reduce offset voltages, such as operational amplifier input stages.
- High-frequency switching applications requiring fast transistor response and stable gain characteristics.
- Driver stages in motor control and power management systems needing reliable transistor performance under varying loads and temperatures.
- Custom hybrid integrated circuits where bare die components are assembled into compact, multifunctional modules for industrial electronics.
JANKCA2N3810-Dual-Transistor-Die Advantages vs Typical Alternatives
This dual transistor die offers superior matching and consistent electrical parameters compared to discrete transistor pairs, enhancing circuit precision and stability. Its high transition frequency and wide temperature tolerance provide performance advantages in demanding industrial applications. The bare die format also allows for more compact and thermally efficient designs, making it a preferred choice over traditional packaged transistors for customized semiconductor solutions.
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JANKCA2N3810-Dual-Transistor-Die Brand Info
The JANKCA2N3810-Dual-Transistor-Die is manufactured by a reputable semiconductor producer specializing in discrete transistor devices and bare die components. Known for delivering high-quality, reliable transistor solutions, the brand supports industrial and analog circuit designers with standard and custom semiconductor products. This dual transistor die reflects the company??s focus on precision, performance, and flexibility, catering to applications requiring matched transistor pairs and bare die integration.
FAQ
What is the maximum collector current rating for each transistor on this dual transistor die?
Each transistor on the die can handle a maximum collector current of 200 mA. This rating ensures the device can manage moderate power switching and amplification tasks typical in analog and driver circuits.
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