JANKCA2N3636-Transistor-Die by JANKCA2N – High-Performance Switching Transistor Die

  • This transistor die controls current flow efficiently, enabling precise signal amplification in electronic circuits.
  • Its electrical characteristics support stable operation, ensuring consistent performance under varying conditions.
  • The compact die size allows integration into space-constrained designs, optimizing overall board layout.
  • Ideal for use in power management modules, it enhances device responsiveness and energy control.
  • Manufactured with rigorous quality checks to maintain durability and long-term reliability in demanding environments.
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产品上方询盘

JANKCA2N3636-Transistor-Die Overview

The JANKCA2N3636-Transistor-Die is a high-performance semiconductor component designed for integration into advanced electronic circuits. This transistor die offers reliable switching and amplification capabilities in a compact form factor, making it suitable for various industrial and commercial applications. Engineered with precise doping and fabrication techniques, it ensures consistent electrical characteristics such as current gain and breakdown voltage. Its bare die format allows for flexible packaging and direct integration in custom assemblies. For detailed sourcing and technical support, visit IC Manufacturer.

JANKCA2N3636-Transistor-Die Key Features

  • High current gain: Enables efficient signal amplification with minimal distortion, improving overall circuit performance.
  • Robust breakdown voltage: Ensures device reliability under high-voltage conditions, critical for power management applications.
  • Low leakage current: Enhances energy efficiency by reducing unwanted power dissipation during standby or off states.
  • Die-level flexibility: Facilitates custom packaging and integration, allowing engineers to tailor solutions for specific design requirements.

JANKCA2N3636-Transistor-Die Technical Specifications

ParameterSpecification
Collector-Emitter Voltage (VCEO)60 V
Collector Current (IC)5 A
Power Dissipation (Ptot)30 W
Current Gain (hFE)100 (typical)
Transition Frequency (fT)50 MHz
Collector-Base Voltage (VCBO)80 V
Junction Temperature (Tj)150 ??C max
Package TypeBare Die

JANKCA2N3636-Transistor-Die Advantages vs Typical Alternatives

This transistor die provides superior integration flexibility compared to packaged transistors, allowing for tailored thermal management and circuit optimization. Its robust voltage ratings and high current capability enhance reliability in demanding environments. Low leakage current and high gain improve energy efficiency and signal fidelity, making it a preferred choice over standard discrete transistors in high-performance industrial applications.

Typical Applications

  • Power amplification in industrial control systems where precise current handling and voltage tolerance are essential for stable operation.
  • Switching elements in DC-DC converters, enabling efficient power regulation in embedded systems.
  • Signal amplification stages in communication equipment requiring high gain and low noise characteristics.
  • Custom semiconductor assembly integration for automotive or consumer electronics requiring compact and reliable transistor solutions.

JANKCA2N3636-Transistor-Die Brand Info

The JANKCA2N3636-Transistor-Die is produced by a leading semiconductor manufacturer specializing in high-quality discrete devices. This product embodies the company??s commitment to precision engineering and reliability, delivering semiconductor dies that support advanced electronic designs. Its manufacturing process adheres to rigorous quality standards, ensuring consistent performance across production batches. The die format supports flexible integration, aligning with modern industrial demands for customizable and scalable electronic components.

FAQ

What is the maximum collector current rating for this transistor die?

The maximum collector current rating is specified at 5 amperes, ensuring the device can handle substantial load currents in power-related applications without compromising reliability.

Can this bare die transistor be used in high-frequency circuits?

Yes, with a transition frequency of 50 MHz, this transistor die is suitable for moderate high-frequency applications such as communication signal amplification and switching.

How does the bare die format impact integration in custom assemblies?

The bare die format allows engineers to directly mount the transistor die onto substrates or heat sinks, providing greater flexibility in thermal management and circuit design compared to standard packaged devices.

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产品中间询盘

What are the thermal limitations of this transistor die?

The maximum junction temperature is rated at 150 ??C, which defines the upper thermal operating limit to maintain device integrity and long-term reliability under typical operating conditions.

Is the transistor die suitable for automotive electronic applications?

While the transistor die offers robust voltage and current ratings, suitability for automotive use depends on additional environmental and reliability qualifications specific to automotive standards, which should be verified with the manufacturer.

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