JANKCA2N3635-Transistor-Die Overview
The JANKCA2N3635-Transistor-Die is a high-performance bipolar junction transistor die designed for integration into advanced semiconductor modules and discrete component assemblies. Engineered to deliver reliable switching and amplification in demanding industrial environments, this transistor die offers robust electrical characteristics suited for power management and signal processing applications. With its precise electrical parameters and compatibility with standard assembly processes, it supports engineers and sourcing specialists in achieving efficient circuit designs. Available through IC Manufacturer, this die ensures consistent quality and performance at the semiconductor wafer level.
JANKCA2N3635-Transistor-Die Key Features
- High current gain: Enables efficient signal amplification, reducing the need for additional amplification stages and improving overall circuit performance.
- Low saturation voltage: Minimizes power loss during switching, which is critical for energy-efficient power control applications.
- Robust thermal tolerance: Supports reliable operation under elevated junction temperatures, enhancing device longevity and stability.
- Compact die size: Facilitates integration into multi-chip modules and customized semiconductor packages, optimizing board space and system miniaturization.
JANKCA2N3635-Transistor-Die Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 60 | V |
| Collector Current (IC) | 8 | A |
| Power Dissipation (Ptot) | 30 | W |
| DC Current Gain (hFE) | 40?C160 | ?C |
| Transition Frequency (fT) | 100 | MHz |
| Junction Temperature (Tj) | 150 | ??C |
| Base-Emitter Voltage (VBE) | 1.2 | V |
| Storage Temperature Range (Tstg) | -65 to +150 | ??C |
JANKCA2N3635-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior current gain and low saturation voltage compared to typical discrete transistors, resulting in enhanced switching efficiency and reduced power dissipation. Its robust thermal performance ensures reliable operation under harsh conditions, which is advantageous for industrial applications requiring long-term stability. The compact die form factor also supports seamless integration into custom semiconductor solutions, setting it apart from bulkier alternatives.
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Typical Applications
- Power amplification in industrial control systems, providing efficient signal boosting with minimal thermal losses for enhanced system reliability.
- Switching elements in power management circuits requiring fast response and high current capability.
- Integration into multi-chip modules (MCM) for compact electronic assemblies where space and performance are critical.
- Signal conditioning in communication equipment, ensuring precise amplification and low noise operation.
JANKCA2N3635-Transistor-Die Brand Info
The JANKCA2N3635-Transistor-Die is a precision semiconductor product designed under stringent quality protocols by IC Manufacturer. This product line reflects the company??s commitment to delivering reliable and high-performance transistor dies for industrial and commercial electronics. Each die undergoes rigorous testing to meet exacting electrical and thermal standards, assuring consistent performance for critical applications in power control, signal processing, and integrated circuit assembly.
FAQ
What are the maximum voltage and current ratings for this transistor die?
The transistor die supports a maximum collector-emitter voltage of 60 volts and a collector current rating of up to 8 amperes. These ratings enable its use in moderately high-power switching and amplification tasks in industrial circuits.
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Can this transistor die operate reliably at elevated temperatures?
Yes, the device is rated for junction temperatures up to 150??C, allowing it to maintain performance and reliability under high thermal stress conditions often encountered in industrial environments.
How does the current gain vary across this transistor die?
The DC current gain (hFE) ranges between 40 and 160 depending on operating conditions. This range allows designers to optimize circuit parameters for specific amplification and switching needs.
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Is this transistor die suitable for integration into multi-chip modules?
Its compact die size and robust electrical characteristics make it highly suitable for embedding into multi-chip modules or custom semiconductor assemblies where space and performance are critical factors.
What storage conditions are recommended for this transistor die?
The recommended storage temperature range is from -65??C to +150??C, ensuring the die remains stable and free from damage prior to assembly and use in electronic systems.
