JANKCA2N2919-Dual-Transistor-Die Overview
The JANKCA2N2919-Dual-Transistor-Die is a precision semiconductor component designed for integration in high-performance electronic circuits. Featuring two NPN transistors on a single silicon die, it optimizes space and enhances circuit efficiency by providing matched transistor pairs for amplification and switching applications. Its compact die format supports custom packaging and hybrid module assembly, making it ideal for engineers seeking reliable, high-gain transistors with consistent electrical characteristics. This dual-transistor die offers excellent gain bandwidth and collector current capacity, ensuring robust performance in demanding industrial environments. For more detailed product data, visit the IC Manufacturer resource center.
JANKCA2N2919-Dual-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor (BJT) |
| Number of Transistors | 2 (Dual Transistor on Single Die) |
| Collector-Emitter Voltage (VCEO) | 40 V |
| Collector Current (IC) | 800 mA max per transistor |
| DC Current Gain (hFE) | 50 to 300 (depending on operating point) |
| Transition Frequency (fT) | 100 MHz typical |
| Base-Emitter Voltage (VBE) | Approximately 0.65 V at 10 mA |
| Package Type | Unpackaged Die for Hybrid Assembly |
| Operating Temperature Range | -55??C to +150??C |
JANKCA2N2919-Dual-Transistor-Die Key Features
- Matched Dual Transistor Configuration: Provides excellent transistor pair matching, enhancing performance in differential amplifier circuits and improving signal fidelity.
- High Gain Bandwidth Product: Supports high-frequency amplification up to 100 MHz, ideal for RF and analog signal processing applications.
- Robust Collector Current Capacity: Handles up to 800 mA per transistor, allowing use in moderate power switching and amplification tasks without compromising reliability.
- Compact Silicon Die Format: Facilitates integration into custom packages or hybrid modules, saving board space and supporting advanced electronic designs.
Typical Applications
- High-frequency amplifier stages in communication equipment requiring precise transistor matching and low noise.
- Switching circuits in industrial control systems demanding reliable transistor operation under continuous load.
- Analog signal processing in instrumentation where low distortion and stable gain are critical.
- Hybrid integrated circuits where dual transistor dies are embedded to optimize form factor and performance.
JANKCA2N2919-Dual-Transistor-Die Advantages vs Typical Alternatives
This dual transistor die offers superior integration by combining two matched NPN transistors on a single silicon substrate, unlike discrete devices that can suffer from variability. Its robust current handling and high gain bandwidth enable enhanced sensitivity and accuracy in amplification tasks. The unpackaged die format allows flexibility in hybrid assembly, contributing to improved circuit density and reliability compared to conventional packaged transistors.
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JANKCA2N2919-Dual-Transistor-Die Brand Info
The JANKCA2N2919-Dual-Transistor-Die is manufactured by JANKCA Semiconductor, a reputable supplier specializing in high-quality bipolar transistor dies and discrete components. Known for precision engineering and stringent quality controls, JANKCA Semiconductor provides reliable semiconductor dies tailored for industrial, communications, and instrumentation applications. This product reflects the brand??s commitment to delivering components that support advanced circuit designs with consistent performance and long-term stability.
FAQ
What is the primary function of the JANKCA2N2919 dual-transistor die?
This device integrates two NPN transistors on a single silicon die, primarily used for amplification and switching in electronic circuits. Its matched transistor pairs improve performance in differential amplifiers and other
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