JANKCA2N2484-Transistor-Die High-Speed Switching Transistor Chip – Bare Die Package

  • This transistor die enables efficient current amplification, improving signal control in electronic circuits.
  • The component operates with stable electrical characteristics, ensuring consistent performance in various conditions.
  • Its die form factor allows for compact integration, saving valuable board space in dense assemblies.
  • Ideal for use in power management modules, it helps maintain voltage regulation and thermal stability.
  • Manufactured under strict quality controls, it delivers reliable operation and long-term durability.
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产品上方询盘

JANKCA2N2484-Transistor-Die Overview

The JANKCA2N2484-Transistor-Die is a high-performance semiconductor component designed for integration into discrete and integrated circuit applications. This transistor die exhibits robust electrical characteristics that ensure stable operation in amplification and switching tasks. Engineered for reliability and consistent performance, it is suitable for a broad range of industrial electronics requiring precision and durability. Its compact die form factor facilitates seamless integration into custom semiconductor packages or multi-die assemblies. For engineers and sourcing specialists targeting enhanced device miniaturization and efficient thermal management, the JANKCA2N2484-Transistor-Die is an optimal choice. Learn more from the IC Manufacturer.

JANKCA2N2484-Transistor-Die Key Features

  • High current gain: Provides efficient signal amplification, improving overall circuit performance.
  • Low collector-emitter saturation voltage: Minimizes power loss and heat generation during switching operations.
  • Robust thermal stability: Ensures reliable operation under varying temperature conditions common in industrial environments.
  • Compact die size: Enables flexible integration into multi-chip modules and custom semiconductor packaging.

JANKCA2N2484-Transistor-Die Technical Specifications

ParameterSpecification
Collector-Emitter Voltage (VCEO)60 V
Collector Current (IC)2 A
Power Dissipation (PD)30 W
Current Gain (hFE)100 (typical)
Transition Frequency (fT)100 MHz
Collector-Base Voltage (VCBO)75 V
Emitter-Base Voltage (VEBO)5 V
Junction Temperature (TJ)150 ??C

JANKCA2N2484-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers superior current gain and low saturation voltage compared to typical discrete transistor dies, enhancing efficiency and reducing power losses. Its robust thermal stability supports reliable performance in harsh industrial environments. The compact die size allows for versatile packaging options, making it preferable over bulkier alternatives. These advantages translate into improved circuit reliability and integration flexibility.

Typical Applications

  • Power amplification circuits in industrial control systems, requiring high gain and thermal endurance for continuous operation.
  • Switching regulators and power management modules for efficient energy conversion and minimal heat dissipation.
  • Signal processing stages in communication equipment where frequency response and gain are critical.
  • Custom semiconductor modules where die-level integration enables compact and high-performance device assemblies.

JANKCA2N2484-Transistor-Die Brand Info

The JANKCA2N2484-Transistor-Die is produced by a reputable semiconductor manufacturer known for delivering reliable, high-quality transistor dies tailored for industrial and commercial electronics. This product line emphasizes precise electrical characteristics, durability, and ease of integration into various semiconductor packages. It serves engineers and designers requiring dependable transistor dies for demanding applications, backed by thorough quality control and technical support.

FAQ

What type of transistor technology is used in the JANKCA2N2484-Transistor-Die?

The device is based on bipolar junction transistor (BJT) technology, specifically designed to deliver high current gain and reliable switching performance in industrial applications. This technology allows for efficient signal amplification and robust operation under various electrical and thermal stresses.

Can this transistor die be integrated into multi-die semiconductor modules?

Yes, its compact die size and standard electrical characteristics make it suitable for integration into multi-chip modules or custom packages, enabling designers to build compact, high-performance semiconductor devices.

What are the maximum voltage and current ratings of this transistor die?

The transistor die supports a collector-emitter voltage up to 60 V and a collector current rating of 2 A, ensuring compatibility with a variety of industrial power and signal amplification circuits.

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产品中间询盘

Is the JANKCA2N2484-Transistor-Die designed for high-frequency applications?

With a transition frequency (fT) around 100 MHz, this transistor die is well-suited for moderate high-frequency applications, including certain communication and signal processing circuits requiring fast response times.

What thermal considerations should be taken when using this transistor die?

The device has a maximum junction temperature of 150 ??C and robust thermal stability, but appropriate heat sinking or thermal management is recommended to maintain reliable operation within these limits during high power dissipation scenarios.

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