JANHCD2N5152-Transistor-Die by JANHCD | High-Performance Amplification Chip Package

  • This transistor die controls electrical current flow, enabling precise switching and amplification in circuits.
  • Featuring a compact CBZ package, it optimizes board space for dense electronic designs.
  • JANHCD2N5152-Transistor-Die supports efficient power handling, enhancing device performance under load.
  • Ideal for integration in signal processing modules, it ensures stable operation in complex electronic systems.
  • Manufactured to meet industry standards, it offers dependable reliability for long-term use in various applications.
Microchip Technology-logo
产品上方询盘

JANHCD2N5152-Transistor-Die Overview

The JANHCD2N5152-Transistor-Die is a high-performance semiconductor component designed for precision switching and amplification in electronic circuits. Featuring robust electrical characteristics, this transistor die provides engineers with reliable operation across a wide range of industrial and commercial applications. Its compact die form allows for efficient integration into custom assemblies, optimizing space and thermal management. Manufactured under stringent quality standards, it ensures consistent performance and durability. For sourcing and detailed specifications, visit the IC Manufacturer platform.

JANHCD2N5152-Transistor-Die Key Features

  • High current gain: Enables effective signal amplification, improving circuit sensitivity and performance.
  • Low saturation voltage: Minimizes power loss and heat generation, enhancing overall efficiency.
  • Die-level integration: Facilitates compact design and easier mounting in hybrid or custom modules.
  • Robust thermal stability: Supports reliable operation under varying temperature conditions, critical for industrial environments.

JANHCD2N5152-Transistor-Die Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCEO)80V
Collector Current (IC)10A
Power Dissipation (PD)30W
DC Current Gain (hFE)40?C160?C
Transition Frequency (fT)3MHz
Collector-Base Voltage (VCBO)100V
Emitter-Base Voltage (VEBO)5V
Operating Junction Temperature (TJ)150??C

JANHCD2N5152-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers superior current handling and voltage ratings compared to typical alternatives, ensuring higher reliability in demanding industrial circuits. Its low saturation voltage reduces power consumption and heat dissipation, enhancing efficiency. The die format allows for flexible integration in custom modules, providing design engineers with greater versatility. These benefits translate to improved overall system performance and longevity.

Typical Applications

  • Power amplification stages in industrial control systems where high current and voltage handling are essential for reliable operation.
  • Switching components in automotive electronics requiring robust and efficient transistor dies.
  • Signal amplification in communication equipment that demands precise transistor gain and frequency response.
  • Custom hybrid circuit assemblies where compact transistor dies enable optimized thermal management and space savings.

JANHCD2N5152-Transistor-Die Brand Info

This transistor die is produced by a leading semiconductor manufacturer renowned for delivering high-quality components tailored to industrial and commercial electronic applications. The product line emphasizes rigorous testing and consistency, making it a trusted choice for engineers and sourcing specialists seeking reliable transistor dies for advanced circuit designs.

FAQ

What is the maximum collector current rating for this transistor die?

The transistor die supports a maximum collector current of 10 amperes, allowing it to handle substantial current loads in various industrial applications without compromising performance.

Can this transistor die operate reliably at high temperatures?

Yes, it is rated for an operating junction temperature up to 150??C, ensuring stable function in harsh thermal environments commonly encountered in industrial electronics.

What voltage levels can this transistor die withstand?

The device can tolerate collector-emitter voltages up to 80V and collector-base voltages up to 100V, making it suitable for medium to high voltage circuit applications.

📩 Contact Us

产品中间询盘

How does the die format benefit circuit designers?

The bare die format allows for flexible integration into custom hybrid circuits and modules, facilitating space-saving layouts and improved thermal dissipation compared to packaged transistors.

What is the typical current gain range for this transistor die?

The DC current gain ranges between 40 and 160, providing adequate amplification for a variety of signal processing and amplification tasks in electronic systems.

Application

, ,

Save cost and time

Fast global delivery

Original parts guaranteed

Expert after-sale support

Looking for a Better Price?