JANHCC2N6193-Transistor-Die by JANHCC2N – High-Speed Switching Transistor Die Package

  • This transistor die controls current flow efficiently, enabling precise signal amplification and switching tasks.
  • The device supports a maximum voltage rating that ensures safe operation under typical electrical loads.
  • Its bare die format offers a compact footprint, ideal for space-constrained circuit board designs.
  • JANHCC2N6193-Transistor-Die is suited for integration in custom electronics where tailored transistor performance is required.
  • Manufactured under strict quality controls, it delivers consistent performance and long-term operational reliability.
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产品上方询盘

JANHCC2N6193-Transistor-Die Overview

The JANHCC2N6193-Transistor-Die is a high-performance semiconductor component designed for precision switching and amplification in advanced electronic circuits. This transistor die offers robust electrical characteristics, including high voltage tolerance and consistent current gain, making it suitable for industrial and power management applications. Its compact die format allows for easy integration into custom packages or hybrid modules, providing engineers with flexibility in design. Manufactured under stringent quality controls, this transistor die ensures reliability and enhanced thermal performance, meeting the demanding requirements of modern electronics. For more detailed technical support, visit IC Manufacturer.

JANHCC2N6193-Transistor-Die Key Features

  • High voltage tolerance: Supports collector-emitter voltages up to rated maximum, enabling use in power switching applications.
  • Consistent current gain (hFE): Provides reliable amplification, optimizing signal integrity in analog and digital circuits.
  • Compact die size: Facilitates integration into custom packages and multi-chip modules, saving board space and improving design flexibility.
  • Thermal stability: Designed to maintain performance under elevated temperatures, enhancing reliability in industrial environments.

JANHCC2N6193-Transistor-Die Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCEO)120V
Collector Current (IC)20A
Power Dissipation (Ptot)150W
Current Gain (hFE)40?C100??
Transition Frequency (fT)4MHz
Operating Junction Temperature (Tj)?C65 to +150??C
Base-Emitter Voltage (VBE)1.5V
Package TypeDie (bare semiconductor)??

JANHCC2N6193-Transistor-Die Advantages vs Typical Alternatives

This transistor die delivers superior voltage and current ratings compared to standard discrete transistors, enhancing robustness in demanding industrial circuits. Its compact die format allows for custom packaging, enabling better thermal management and space savings. With consistent current gain and high frequency response, it ensures efficient switching and amplification performance. These advantages combine to provide improved reliability, integration flexibility, and long-term operational stability versus typical off-the-shelf transistor components.

Typical Applications

  • Power management circuits where high voltage and current handling capabilities are critical for efficient switching and control.
  • Amplification stages in industrial signal processing requiring stable current gain and low distortion.
  • Hybrid module design enabling integration of multiple die components for compact power electronics.
  • Custom semiconductor packaging where bare die format allows for tailored thermal and electrical characteristics.

JANHCC2N6193-Transistor-Die Brand Info

The JANHCC2N6193 transistor die is produced by a leading semiconductor manufacturer specializing in high-quality discrete devices for industrial applications. This product reflects the brand??s commitment to precision engineering and reliable performance under harsh operating conditions. The die-level offering supports advanced assembly techniques and customization, making it a trusted choice for engineers designing robust, high-power electronic systems.

FAQ

What is the maximum collector-emitter voltage of this transistor die?

The transistor die supports a maximum collector-emitter voltage of 120 volts, allowing it to operate safely within high voltage circuits common in power electronics and industrial control systems.

Can this transistor die handle high current loads?

Yes, it is rated for collector currents up to 20 amperes, making it suitable for applications that require substantial current handling without compromising device integrity.

Is the transistor die suitable for high-frequency applications?

With a transition frequency of approximately 4 MHz, this die can be used in moderate-frequency switching and amplification tasks, fitting many industrial and power management scenarios.

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产品中间询盘

What temperature range does the device support?

The operating junction temperature range spans from ?C65??C to +150??C, ensuring reliable functionality across a wide range of environmental conditions and thermal stresses.

How is the transistor die typically integrated into a system?

This bare semiconductor die is intended for integration into custom packages or hybrid modules, allowing manufacturers to optimize thermal management and electrical connections according to specific application requirements.

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