JANHCC2N5151-Transistor-Die by JANHCC2N5151 – High-Performance Switching Transistor Die

  • This transistor die controls current flow efficiently, enabling precise amplification in electronic circuits.
  • Its compact package reduces board space, allowing for denser circuit designs and easier integration.
  • JANHCC2N5151-Transistor-Die supports stable operation under varying electrical loads, enhancing circuit reliability.
  • Ideal for use in power regulation modules, it helps maintain consistent voltage levels in complex systems.
  • Manufactured with stringent quality controls, it ensures long-term performance and durability in demanding environments.
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产品上方询盘

JANHCC2N5151-Transistor-Die Overview

The JANHCC2N5151-Transistor-Die is a high-performance semiconductor device designed for efficient amplification and switching applications. This transistor die offers robust electrical characteristics with a focus on reliability and precision control in industrial electronics. It is optimized for integration into complex circuits requiring stable operation under varying load conditions. Suitable for engineers and sourcing specialists, this transistor die ensures enhanced thermal stability and consistent gain performance, making it a dependable choice for precision analog and power management designs. For detailed sourcing and manufacturing information, visit IC Manufacturer.

JANHCC2N5151-Transistor-Die Key Features

  • High Current Handling Capability: Supports continuous collector current, enabling robust power amplification and switching with minimal distortion.
  • Optimized Gain Characteristics: Ensures linear amplification, which is critical for accurate signal processing in analog circuits.
  • Thermal Stability: Designed to maintain performance under elevated temperatures, enhancing reliability in industrial environments.
  • Compact Die Size: Facilitates integration into multi-chip modules, supporting miniaturization of electronic assemblies.

JANHCC2N5151-Transistor-Die Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 80 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 1.5 A
Power Dissipation (Ptot) 30 W
Transition Frequency (fT) 100 MHz
DC Current Gain (hFE) 40?C160 ??
Junction Temperature (TJ) 200 ??C

JANHCC2N5151-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers superior current capacity and voltage tolerance compared to typical alternatives, delivering enhanced power handling and longevity. Its robust thermal management and consistent gain parameters ensure reliable operation in demanding industrial circuits. These advantages translate into improved efficiency, reduced system failures, and greater design flexibility for engineers sourcing high-quality semiconductor components.

Typical Applications

  • Power amplification in industrial control systems, where stable gain and high current capacity are essential for precise signal amplification and switching.
  • Signal processing circuits requiring linear amplification with minimal distortion, ensuring accuracy in analog applications.
  • Switching regulators and power management modules that benefit from the device??s high voltage and current ratings.
  • Integration within multi-chip modules for compact, high-performance electronic assemblies in industrial automation equipment.

JANHCC2N5151-Transistor-Die Brand Info

The JANHCC2N5151-Transistor-Die is a product engineered under stringent quality standards to meet industrial-grade requirements. Manufactured by a reputable semiconductor supplier, this transistor die reflects advanced fabrication techniques to ensure consistency and reliability. It is specifically designed to provide engineers and sourcing specialists with a dependable device suitable for demanding electronic environments, supporting a broad range of industrial applications.

FAQ

What are the maximum voltage ratings for this transistor die?

The transistor die features a maximum collector-emitter voltage of 80 V, collector-base voltage of 100 V, and emitter-base voltage of 5 V. These ratings ensure safe operation within defined electrical limits, preventing breakdown during high-voltage switching or amplification.

What is the typical current handling capacity of this device?

This transistor die supports a continuous collector current of up to 1.5 A, allowing it to manage considerable power levels typical in industrial amplification and switching circuits without performance degradation.

How does the transistor die perform under thermal stress?

With a maximum junction temperature rated at 200??C, the device offers excellent thermal stability. This capability helps maintain consistent electrical characteristics even in high-temperature environments, reducing the risk of thermal runaway or failure.

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产品中间询盘

What frequency range is supported by this transistor die?

The transition frequency of 100 MHz makes this transistor suitable for moderate to high-frequency applications, supporting efficient signal amplification and switching in industrial electronics requiring fast response times.

Is this transistor die suitable for integration into compact electronic assemblies?

Yes, the compact die size is designed for ease of integration into multi-chip modules and hybrid circuits, enabling miniaturization without compromising electrical performance or reliability in complex industrial systems.

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